The X-Direction Scanning of Atomic Force Microscopy to Analyze Porous Silicon P-Type Si(100) Fabricated by Electrochemical Anodization Method

Abstract

This work only investigated the x-direction scanning of atomic force microscopy, which can accurately measure porous silicon's width, depth, and roughness. Pores on p-type Si (100) surfaces fabricated by electrochemical anodization method with the variation of resistivity and current density, i.e., 0.001-0.005 Ω.cm (high dopant) and 1-10 Ω.cm (low dopant), and 4, 6, 8, and 10 mA/cm2, respectively. Macroporous silicon was obtained for both high and low dopants. Pore width, pore depth, and roughness of silicon increase with increasing the current density. Characteristics of porous silicon for high dopants are smaller than that for low dopants. It indicates that large amounts of dopant in silicon can slow the etching process.