The novel α-BaZn2P2 structural polymorph
has been synthesized and structurally characterized for the first
time. Its structure, elucidated from single crystal X-ray diffraction,
indicates that the compound crystallizes in the orthorhombic α-BaCu2S2 structure type, with unit cell parameters a = 9.7567(14) Å, b = 4.1266(6) Å,
and c = 10.6000(15) Å. With β-BaZn2P2 being previously identified as belonging to
the ThCr2Si2 family and with the precedent of
structural phase transitions between the α-BaCu2S2 type and the ThCr2Si2 type, the potential
for the pattern to be extended to the two different structural forms
of BaZn2P2 was explored. Thermal analysis suggests
that a first-order phase transition occurs at ∼1123 K, whereby
the low-temperature orthorhombic α-phase transforms to a high-temperature
tetragonal β-BaZn2P2, the structure of
which was also studied and confirmed by single-crystal X-ray diffraction.
Preliminary transport properties and band structure calculations indicate
that α-BaZn2P2 is a p-type, narrow-gap
semiconductor with a direct bandgap of 0.5 eV, which is an order of
magnitude lower than the calculated indirect bandgap for the β-BaZn2P2 phase. The Seebeck coefficient, S(T), for the material increases steadily from the
room temperature value of 119 μV/K to 184 μV/K at 600
K. The electrical resistivity (ρ) of α-BaZn2P2 is relatively high, on the order of 40 mΩ·cm,
and the ρ(T) dependence shows gradual decrease
upon heating. Such behavior is comparable to those of the typical
semimetals or degenerate semiconductors.