Theoretical analyses on improved beam properties of GaSb-based 2.X-μm quantum-well diode lasers with no degradation in laser parameters

Abstract

An asymmetric laser heterostructure is developed to improve the beam properties of GaSb-based diode lasers with no degradation in laser parameters. Employing the semivectorial finite difference method, the dependences of beam divergence and optical confinement factor on waveguide width and refractive index step are investigated theoretically. After carefully design, a particular asymmetric laser structure is proposed. Its beam divergence in the fast axis is reduced from 61° to 34° compared with that of the broad-waveguide structure. The optical confinement factor is approximately equal to 0.0362 and comparable to that of the conventional broad-waveguide structure.

Thermally induced native defect transform in annealed GaSb

“…[1,2] GaSb is of interest as a low band gap material with applications in devices operating in the infrared range. [3] GaSbbased device structures have shown potential for applications in infrared detectors with high quantum efficiency, [4][5][6] diode lasers with low threshold voltage, [7][8][9][10] and high-efficiency thermophotovoltaic (TPV) cells. [11][12][13] The detection of longer wavelengths, 8-14 µm, is also possible with inter-subband absorption in antimonide-based superlattices.…”