Theoretical analysis and modelling of degradation for III–V lasers on Si

Liu, Jianzhuo; Tang, Mingchu; Deng, Huiwen; Shutts, Samuel; Wang, Lingfang; Smowton, Peter M.; Jin, Chao-Yuan; Chen, Siming; Seeds, A.J.; Liu, Huiyun

doi:10.1088/1361-6463/ac83d3

Cited by 7 publications

(6 citation statements)

References 35 publications

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“…According to the proposed model, the degradation of the optical characteristics below threshold is driven by the increase in carrier losses in the QWs, possibly due to the increase in NRRCs within this region. ,,− To link this behavior with the degradation of the optical characteristics above threshold, i.e., to the increase in I th and the decrease in SE, we employed a second modified rate equation model to qualitatively analyze the variation of the L – I curves. The proposed model is valid for a QW laser, but the phenomenological considerations can be applied also to QD lasers .…”

Section: Results and Discussionmentioning

confidence: 99%

Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization

Zenari,

Buffolo,

De Santi

et al. 2023

ACS Photonics

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We propose a novel methodology capable of separately evaluating the contribution of the different recombination processes in quantum dot laser diodes (QD LDs) driven below-threshold. The proposed approach is based on the analysis of the subthreshold optical characteristics of the devices and was used to evaluate the variation in recombination parameters induced by a long-term stress test. The results of this work indicate that the optical degradation of QD LDs is mainly driven by the increase in the concentration of nonradiative recombination centers within the QWs (quantum wells), with consequent decrease in the injection efficiency. The reported results are of fundamental importance because they demonstrate that conventional models for the extrapolation of the nonradiative lifetime are not capable of reasonably extracting that parameter for LDs featuring a dot-in-a-well-based active region: this limitation is overcome by the reported modeling approach.

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Section: Results and Discussionmentioning

confidence: 99%

Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization

Zenari,

Buffolo,

De Santi

et al. 2023

ACS Photonics

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“…PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0135606 radiative recombinations in the active zone, which increases the threshold current density at the expense of the device's lifetime. 17,18,19,20,21 Still, other aspects remain unclear in the literature where it is often stated that dislocations introduce optical losses as well. 18,20,22,23 In this work, we compared two series of GaSb-based DLs with different numbers of quantum wells (n QW ) in their active zones.…”

Section: Introductionmentioning

confidence: 99%

“…17,18,19,20,21 Still, other aspects remain unclear in the literature where it is often stated that dislocations introduce optical losses as well. 18,20,22,23 In this work, we compared two series of GaSb-based DLs with different numbers of quantum wells (n QW ) in their active zones. One series was grown on native GaSb substrates whereas the other one was grown on Si substrates.…”

Section: Introductionmentioning

confidence: 99%

Effect of dislocations on the performance of GaSb-based diode lasers grown on silicon

Remis

Monge-Bartolomé

Boissier

et al. 2023

Journal of Applied Physics

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Silicon photonics is a promising technology for the fabrication of dense photonic chips, thanks to the very mature silicon industry. The direct epitaxial growth of III–V lasers on silicon is one of the main challenges for the realization of compact and robust mid-infrared sensors based on photonic integrated circuits. The crystal defects arising from this heteroepitaxial growth affect the laser performance and, therefore, need to be mitigated but also studied to better understand their impact on the laser operation. Here, we studied the effect of threading dislocations on laser performance by comparing the series of GaSb-based diode lasers grown on native GaSb and Si substrates with different numbers of quantum wells ( nQW) in their active zones. As expected, the laser threshold currents are higher in the case of diode lasers on Si, and they rapidly vary with nQW. Still, the lowest threshold current densities are achieved with nQW = 1 for both substrates. With the help of a theoretical gain model, we attribute these results to the fact that dislocations create non-radiative recombination but do not introduce additional optical losses. This work allows a better understanding of the origin of performance degradation and the decision to be made regarding the heterostructure design.

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“…[12][13][14][15] InAs quantum dot (QD) lasers on silicon are a key technology that will benefit from a more detailed understanding of these broader dislocation-related impacts. [16][17][18][19] These are the most dislocation-tolerant datacom-band lasers directly grown on silicon, but we need to continue to improve reliability at high current and high temperatures as well as improve manufacturability and uniformity. There is also a wide range of other metamorphically grown III-V structures such as multijunction solar cells [20] and various photodetectors, [21] lasers, [22] and single-photon sources, [23] often based on InAs QDs [24] and InSb QDs, [25] all of which can benefit from a detailed representation of dislocation behavior and their local environment.…”

Section: Introductionmentioning

confidence: 99%

Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon

Hughes

Kusch

Selvidge

et al. 2023

Physica Status Solidi (a)

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This study probes the extent to which dislocations reduce carrier lifetimes and alter growth morphology and luminescence in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic‐integrated circuits. Around 20%–30% shorter carrier lifetimes are found at spatially resolved individual dislocations at room temperature using time‐resolved cathodoluminescence spectroscopy, highlighting the strong nonradiative impact of dislocations even against the three‐dimensional confinement of QDs. Beyond these direct effects of increased nonradiative recombination, it is found that misfit dislocations in the defect filter layers employed during III–V/Si growth alter the QD growth environment to induce a crosshatch‐like variation in QD emission color and intensity when the filter layer is positioned sufficiently close to the QD emitter layer. Sessile threading dislocations generate even more egregious hillock defects that also reduce emission intensities by altering layer thicknesses, as measured by transmission electron microscopy and atom probe tomography. This work presents a more complete picture of the impacts of dislocations relevant to the development of light sources for scalable silicon photonic integrated circuits.

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Theoretical analysis and modelling of degradation for III–V lasers on Si

Cited by 7 publications

References 35 publications

Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization

Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization

Effect of dislocations on the performance of GaSb-based diode lasers grown on silicon

Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon

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