Theoretical Analysis of Dielectric Modulated Drift Region for Si Power Devices

Zhou, Jiuyang; Chen, Huang-Chin; Chen, Yen-Hsin

doi:10.1109/led.2015.2400457

“…Through research and analysis, we can draw the following conclusions. (1) In PIN structure, insertion of light doped Al P-type semiconductor can move the center of depletion layer to the depth of the device, expand the width of depletion layer, and significantly improve the reverse withstand voltage. (2) Covering a layer of polysilicon as passivation layer can improve the edge carrier distribution concentration, reduce the surface electric field and reduce the risk of breakdown.…”

Section: Discussionmentioning

confidence: 99%

“…In recent years, the third generation semiconductor diode has a tendency to blowout for its material properties, however, the silicon-based diodes cannot be completely replaced due to the huge cost advantage and mature manufacturing process. Power diode based on PN junction theory has been deeply studied and various structures have been proposed, which make significant progress for the performance, while the high reverse blocking capabilities are still strongly demanded [1][2].…”

Section: Introductionmentioning

confidence: 99%

Multi-Layer Compound Passivation and Dual-P Diffusion Enhanced Si Power Diode Performance

Jiang

¹

,

Wang

²

2022

Advances in Transdisciplinary Engineering

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Power diode with multi-layer compound passivation and dual-P typed diffusion are studied and manufactured. Combine multiple advantages, a power diode with reverse breakdown voltage higher than 2200V, static on-resistance 1.11Ω and leakage current of 8.3mA can be obtained on silicon with a drift layer thickness of 280um and a resistivity of 60Ωcm. Simulation shows multilayer passivation layer with polysilicon contact can effectively change the edge carrier distribution, thus reducing the transverse current generation and improving the voltage withstand. Inserting a light and deep aluminum doped layer into PIN diode can increase the reverse withstand voltage by more than 16% through expanding depletion layer. And the moat structure of the device can further reduce the edge peak electric field, thus reducing the risk of breakdown. This device can be used in switching power supply and inverter.

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“…To address the issue of a lack of shallow acceptors in gallium oxide, the dielectric superjunction technique has been explored [16]- [19]. High-k dielectrics have been recently investigated for electric field management in lateral and vertical device structures based on wide band gap semiconductors [20]- [22].…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of High-k Dielectric Super junction Schottky Barrier Diodes Beyond Unipolar Figure of Merit

Roy,

Krishnamoorthy

2023

Preprint

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This study presents design guidelines for a high-k dielectric Superjunction Schottky barrier diode (SBD) to further enhance the already impressive unipolar power figure of merit (PFOM) of Ultra-wide bandgap (UWBG) materials. We employed analytical modeling to optimize the device parameters, accounting for the appropriate dielectric and semiconductor dimensions including the aspect ratio and the dielectric constant of the highk material. Our findings reveal that device performance is intimately linked to structural dimensions and the dielectric constant of the insulator. Specifically, we observed that the dielectric superjunction SBD exhibits behavior akin to a conventional SBD, where the effective doping density in the drift layer decreases by a factor dependent on semiconductor and dielectric width, aspect ratio and the dielectric constant of the insulator. We discuss optimal design guidelines for achieving a 10 kV β-Ga2O3 SBD with a PFOM of 50 GW/cm2, a significant improvement over the conventional unipolar PFOM of 34 GW/cm2 for β-Ga2O3. Additionally, we conducted a comparative analysis of the switching energies between the superjunction Schottky barrier diode and a conventional Schottky barrier diode.We provide design guidelines to minimize switching energies for a desired PFOM in β-Ga2O3 SBDs. This underscores the immense potential of such structures in advancing vertical power electronics to unprecedented levels of performance.

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“…To address the issue of a lack of shallow acceptors in gallium oxide, the dielectric superjunction technique has been explored [16]- [19]. High-k dielectrics have been recently investigated for electric field management in lateral and vertical device structures based on wide band gap semiconductors [20]- [22].…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of High-k Dielectric Super junction Schottky Barrier Diodes Beyond Unipolar Figure of Merit

Roy,

Krishnamoorthy

2023

Preprint

0

View full text Add to dashboard Cite

This study presents design guidelines for a high-k dielectric Superjunction Schottky barrier diode (SBD) to further enhance the already impressive unipolar power figure of merit (PFOM) of Ultra-wide bandgap (UWBG) materials. We employed analytical modeling to optimize the device parameters, accounting for the appropriate dielectric and semiconductor dimensions including the aspect ratio and the dielectric constant of the highk material. Our findings reveal that device performance is intimately linked to structural dimensions and the dielectric constant of the insulator. Specifically, we observed that the dielectric superjunction SBD exhibits behavior akin to a conventional SBD, where the effective doping density in the drift layer decreases by a factor dependent on semiconductor and dielectric width, aspect ratio and the dielectric constant of the insulator. We discuss optimal design guidelines for achieving a 10 kV β-Ga2O3 SBD with a PFOM of 50 GW/cm2, a significant improvement over the conventional unipolar PFOM of 34 GW/cm2 for β-Ga2O3. Additionally, we conducted a comparative analysis of the switching energies between the superjunction Schottky barrier diode and a conventional Schottky barrier diode.We provide design guidelines to minimize switching energies for a desired PFOM in β-Ga2O3 SBDs. This underscores the immense potential of such structures in advancing vertical power electronics to unprecedented levels of performance.

show abstract

Theoretical Analysis of Dielectric Modulated Drift Region for Si Power Devices

Cited by 10 publications

References 10 publications

Multi-Layer Compound Passivation and Dual-P Diffusion Enhanced Si Power Diode Performance

Multi-Layer Compound Passivation and Dual-P Diffusion Enhanced Si Power Diode Performance

Design and Analysis of High-k Dielectric Super junction Schottky Barrier Diodes Beyond Unipolar Figure of Merit

Design and Analysis of High-k Dielectric Super junction Schottky Barrier Diodes Beyond Unipolar Figure of Merit

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