2002
DOI: 10.1109/jlt.2002.800380
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Theoretical analysis of finite-height semiconductor-on-insulator-based planar photonic crystal waveguides

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Cited by 24 publications
(18 citation statements)
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“…Such dispersion is actually expected for the PCW mode in silicon-on-insulator PBG structures. 23 Considering the wavelength dependence of the propagation constant determined from the corresponding spatial spectrums, we calculated the phase and group velocities for TM-polarized and TEpolarized PCW modes in the wavelength range of 1500-1610 nm. The results obtained were normalized with respect to the speed of light in vacuum and plotted in Fig.…”
Section: Dispersion Of the Mode Propagation Constantmentioning
confidence: 99%
“…Such dispersion is actually expected for the PCW mode in silicon-on-insulator PBG structures. 23 Considering the wavelength dependence of the propagation constant determined from the corresponding spatial spectrums, we calculated the phase and group velocities for TM-polarized and TEpolarized PCW modes in the wavelength range of 1500-1610 nm. The results obtained were normalized with respect to the speed of light in vacuum and plotted in Fig.…”
Section: Dispersion Of the Mode Propagation Constantmentioning
confidence: 99%
“…with holes arranged in a triangular array, as this arrangement provides PBG for TE polarized light [16]. Until now, very little attention has been devoted to investigate the propagation of TM polarized light in such PCWs, since there is no PBG for this polarization.…”
Section: Si ~300nmmentioning
confidence: 99%
“…Figure 4 shows the calculated Q versus the air hole depth. When the air holes are etched only in the silicon layer (d h ϭ 0.6 a, as in many experimental cases [25,26]), Q is only 789. When the air holes are etched deep enough through the silica layer (d h Ͼ 2.0a), Q reaches its saturated value, 1.66 ϫ 10 3 (more than two times larger than that of d h ϭ 0.6a).…”
Section: Three Missing Hole Cavities In a Soi-type Photonic Crystal Slabmentioning
confidence: 97%
“…Silicon-on-insulator wafers are commercially available high-quality structures, and the related nanofabrication technology is nearly compatible with existing mature device fabrication technology for very-large-scale integrated electronic circuits. PhCs made from SOI wafers (for example, see [23][24][25][26][27][28]) are thus promising, since they may be a bridge to connect photonic circuits and electronic circuits. Another advantage of SOI-type PhC structures is that they are more mechanically stable than membrane-type ones, due to the solid substrate.…”
Section: Three Missing Hole Cavities In a Soi-type Photonic Crystal Slabmentioning
confidence: 99%