Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell

Sogabe, Tomah; Kaizu, Toshiyuki; Okada, Yoshitaka; Tomić, Stanko

doi:10.1063/1.4828359

Cited by 17 publications

(8 citation statements)

References 23 publications

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“…(ii) extension of the self-developed DDM code to include the effects such as the electric field dependent mobility and diffusion coefficient as well as cooling and hot carrier competing dynamics illustrated in equation ( 1) [5][6][7].…”

Section: Hot Carrier Dynamics Simulation Using Hydrodynamic / Energy ...mentioning

confidence: 99%

“…where the Here equation ( 4), ( 5), ( 6), ( 7), ( 8) are the familiar Poissons equation, current continuity equation and current density. Note that in (7) and ( 8), there is additional contribution to the current density due to the hot carrier temperature gradient when compared to the normal drift-diffusion simulation (DDM). These formulae are physically corresponding to the particle conservation equation (2) in thermodynamic detailed balance model.The key feature in hydrodynamic/energy transportation model is the energy balance equation (9).…”

Section: Hot Carrier Dynamics Simulation Using Hydrodynamic / Energy ...mentioning

confidence: 99%

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Hot Carrier Transportation Dynamics in InAs/GaAs Quantum Dot Solar Cell

Sogabe

Nii

Sakamoto

et al. 2017

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

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The hot carrier dynamics and its effect on the device performance of GaAs solar cell and InAs/GaAs quantum dot solar cell (QDSC) was investigated. At first, the fundamental operation feature of conventional hot carrier solar cell was simulated based on the detailed balance thermodynamic model. Then we investigated the hot carrier dynamics in the normal junction based solar cell using hydrodynamic/energy Boltzmann transportation model (HETM) where the two temperature (carrier temperature and lattice temperature are treated separately. For the first time, we report an inherent quasi-equivalence between the detailed balance model and HETM model. The inter-link revealed here addresses the energy conservation law used in the detailed balance model from different angle and it paves a way toward an alternative approach to curtail the selective contact constraints used in the conventional hot carrier solar cell. In simulation, a specially designed InAs/GaAs quantum dot solar cell was used in the simulation. By varying the hot carrier energy relaxation time , an increase in the open circuit voltage was clearly found with the increase of . Detailed analysis was presented regarding the spatial distribution of hot carrier temperature and its interplay with electric field and three hot carrier recombination processes (Auger, SRH and Radiative) Thermal emission ( 'Hot' SC)Radiative emission ( 'cool' SC)

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Section: Hot Carrier Dynamics Simulation Using Hydrodynamic / Energy ...mentioning

confidence: 99%

Section: Hot Carrier Dynamics Simulation Using Hydrodynamic / Energy ...mentioning

confidence: 99%

Hot Carrier Transportation Dynamics in InAs/GaAs Quantum Dot Solar Cell

Sogabe

Nii

Sakamoto

et al. 2017

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

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“…33) To improve the IBSC efficiency, host materials with a much wider band gap, such as AlGaAs or GaP, are required. 34,35) In this work, we selected GaAs Al Ga As devices have been reported previously. 34,36,37) Those investigation results were referred to in this work to construct the initial device model so as to match the practical conditions.…”

Section: Introductionmentioning

confidence: 99%

Inverse design of intermediate band solar cell via a joint drift-diffusion simulator and deep reinforcement learning scheme

Shiba

Miyashita

Okada

et al. 2023

Jpn. J. Appl. Phys.

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In this work, we developed an efficient inverse design approach for optimal intermediate band solar cells (IBSC) device design given a target performance by using a joint drift-diffusion simulator and deep reinforcement learning scheme.GaAs quantum well embedded AlGaAs IBSC was used as the test candidate to verify the performance of the AI based inverse design approach. Maximum efficiency of was reached for the device with optimal structure parameters searched by the AI agent, which exceeds the target efficiency of 30%. Our work presented here demonstrate for the first time that a well-trained AI agent can fulfill the target efficiency by searching the optimal parameters with sound physical meaning for solar cell device. The AI-based inverse design approach shows promising potential to serve as an efficient device design tool by greatly reduce the number of trial-and-error experiment demonstrations and replacing laborious human guided device design.

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confidence: 99%

Quantum Dot Superlattice For High-Efficiency Intermediate Band Solar Cells

Okada

2014

Light, Energy and the Environment

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Practical implementation of high-efficiency quantum dot intermediate band solar cells (QD-IBSCs) must be accompanied with sufficient photocurrent generation via IB states [1][2][3][4][5][6][7][8][9]. The demonstration of QD-IBSC is presently undergoing two stages. The first is to develop epitaxial growth and printing technologies to fabricate high density QD array and superlattice of low defect density which are placed in the active absorption layer of the solar cell. The second phase is to realize partially-filled or ideally half-filled IB states with carriers in order to maximize the photocurrent generation by two-step absorption of infrared photons of solar spectrum.For the former requirement, we have developed a strain-compensation or strain-balanced technique in order to fabricate multiple stacks of self-organized InAs QDs in GaNAs strain-compensating matrix on GaAs substrate [7,8]. For the latter, it has been theoretically shown that doping of QDs and concentrated illumination of the cell at around 1000 suns would result in a sufficient population of carriers in IB as depicted in Fig. 1 [10 ,11]. Production of additive photocurrents has been demonstrated at room temperature in doped QD-IBSCs [12,13]. We have also demonstrated the effect of doping on two-step photocurrent production by fabricating a cell structure as schematically shown in Fig. 2 [12] and also by testing a concentrator solar cell module under concentrated sunlight illuminations as shown in Fig. 3 [14].The purpose of this presentation is to review our approach of fabrication of high-density array of QDs and QD-IBSCs and to summarize the operation principle and cell characteristics. The effect of sunlight concentration on the performance of multi-stacked InAs QD-IBSCs is reviewed. We show that doping of QD-IB states as well as sunlight concentration clearly increase the optical generation rates from the valence band to IB, and from IB to the conduction band. Thus these factors are important because sufficient population of carriers in IB drastically changes the energy band structure into flat-band, which in turn acts to increase the photocurrent production from IB to the conduction band. The QD-IBSCs which commonly suffer from low absorption by QDs are thus expected to recover fast and perform better under concentrated sunlight illumination.

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Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell

Cited by 17 publications

References 23 publications

Hot Carrier Transportation Dynamics in InAs/GaAs Quantum Dot Solar Cell

Hot Carrier Transportation Dynamics in InAs/GaAs Quantum Dot Solar Cell

Inverse design of intermediate band solar cell via a joint drift-diffusion simulator and deep reinforcement learning scheme

Quantum Dot Superlattice For High-Efficiency Intermediate Band Solar Cells

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