Theoretical analysis of gain-recovery time and chirp in QD-SOA

CdSe/ZnSe Quantum-Dot Semiconductor Optical Amplifiers

“…The emission coefficient higher than the absorption coefficient by >6 times. Note here, the peak wavelength~697nm which is in the range of measurements in [7]. The result of emission and absorption can be compared with that in [6].…”

“…Note that, the hole dynamics are neglected due to their larger effective mass [7]. The energy diagram describing the REs system is shown in Figure 2.…”

“…Accordingly the rates of the WL carrier density ( ) w N , ES occupation probability (h) and GS occupation probability (f) can be described by the following REs system [7], (7) (8) …”

ZnSe / ZnS Quantum-Dot Semiconductor Optical Amplifiers

“…Based on the rate equations used in [4] for the wetting layer (WL) carrier density N w , occupation probabilities for ground and exited states (f and h), respectively one can write.…”

“…The carrier dynamics described by the rate Equations are related only to electrons in the conduction band while hole dynamics can be neglected due to their larger effective mass [4]. In addition, typical values of the material parameters in Table 1 [5] for ZnSe/ZnS system where (E g = 2.…”