Theoretical analysis of optical gain in PbSe/Pb1–xSrxSe quantum well lasers

Mid-infrared vertical external cavity surface emitting lasers based on PbSe/PbSrSe multi-quantum-well structures on Si-substrates are realized. A modular design allows growing the active region and the bottom Bragg mirror on two different Si-substrates, thus facilitating comparison between different structures. Lasing is observed from 3.3 to 5.1 μm wavelength and up to 52 °C heat sink temperature with 1.55 μm optical pumping. Simulations show that threshold powers are limited by Shockley-Read recombination with lifetimes as short as 0.1 ns. At higher temperatures, an additional threshold power increase occurs probably due to limited carrier diffusion length and carrier leakage, caused by an unfavorable band alignment.

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“…[19][20][21] The excess carrier density N th needed in order to overcome the losses, g th ðN th ; kÞ ! g Ã th ðkÞþa i ðN th ; kÞ:…”

Section: Threshold Powermentioning

confidence: 99%

PbSe quantum well mid-infrared vertical external cavity surface emitting laser on Si-substrates

Fill¹,

Khiar²,

Rahim³

et al. 2011

Journal of Applied Physics

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“…Due to the rapid advancement in microelectronics technology [64,65] in the last decade, research in the domain of semiconductor nanostructure has been carried out to a great extent by both theoretical [4,66] and experimental workers [5,6]. Quantum well waveguide is fabricated by ion implantation technique using InGaAsP/InP material composition.…”

Section: Introductionmentioning

confidence: 99%

Electronic Band Structure of Quantum Cascade Laser

Deyasi¹

2017

Quantum Cascade Lasers

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Multiple quantum well structure is the subject of theoretical and experimental research over the last two decades due to the possibility of making novel electronic and optoelectronic devices. The phenomenon of resonant tunneling makes it a prime candidate for all tunneling-based quantum devices with one-dimensional coninement. THz laser design using multilayered low-dimensional semiconductor structure is one such example, where miniband formation and its energy diference with lowest quantum state play crucial factor in governing device performance. Quantum cascade laser (QCL) is one of such candidate, which speaks in favor of research using multiple-quantum-well (MQW) structure. In the proposed chapter, transmission coeicient of multiple quantum-well structure is numerically computed using propagation matrix technique, and its density of states is calculated in the presence and absence of electric ield applied along the direction of quantum coninement. Absorption coeicient is also calculated for its possible application as optical emiter/detector. Based on the electronic and photonic properties investigated, electronic band structure of the quantum cascade laser (formed using the MQW structure) is computed. Formation of miniband is tailored with variation of external bias is shown.

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“…20 Since the constant energy surface of PbTe corresponds to four ellipsoids orientated along the four equivalent crystalline [111]-direction, the in-plane and out-of-plane carrier masses of the (100) QWs are adjusted using expressions from Ref. 21. The valence band offset between PbTe and CdTe was assumed to be 135 meV.…”

mentioning

confidence: 99%

In-well pumped mid-infrared PbTe/CdTe quantum well vertical external cavity surface emitting lasers

Khiar

Volobuev

Witzan

et al. 2014

Applied Physics Letters

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Optical in-well pumped mid-infrared vertical external cavity surface emitting lasers based on PbTe quantum wells embedded in CdTe barriers are realized. In contrast to the usual ternary barrier materials of lead salt lasers such as PbEuTe of PbSrTe, the combination of narrow-gap PbTe with wide-gap CdTe offers an extremely large carrier confinement, preventing charge carrier leakage from the quantum wells. In addition, optical in-well pumping can be achieved with cost effective and readily available near infrared lasers. Free carrier absorption, which is a strong loss mechanism in the mid-infrared, is strongly reduced due to the insulating property of CdTe. Lasing is observed from 85 K to 300 K covering a wavelength range of 3.3–4.2 μm. The best laser performance is achieved for quantum well thicknesses of 20 nm. At low temperature, the threshold power is around 100 mWP and the output power more than 700 mWP. The significance of various charge carrier loss mechanisms are analyzed by modeling the device performance. Although Auger losses are quite low in IV–VI semiconductors, an Auger coefficient of CA = 3.5 × 10−27 cm6 s−1 was estimated for the laser structure, which is attributed to the large conduction band offset.

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Theoretical analysis of optical gain in PbSe/Pb_1–xSr_xSe quantum well lasers

Cited by 7 publications

References 21 publications

PbSe quantum well mid-infrared vertical external cavity surface emitting laser on Si-substrates

PbSe quantum well mid-infrared vertical external cavity surface emitting laser on Si-substrates

Electronic Band Structure of Quantum Cascade Laser

In-well pumped mid-infrared PbTe/CdTe quantum well vertical external cavity surface emitting lasers

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