Theoretical and Experimental Determinations of Neutron Energy Deposition in Silicon

Smith, Edward C.; Binder, D.; Compton, P. A.; Wilbur, R. I.

doi:10.1109/tns.1996.4324340

Cited by 32 publications

(6 citation statements)

References 12 publications

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“…In figure 5, f ion and f niel are shown and compared with the experimental data of Sattler [127] for neutron energies between 20 keV and 3.2 MeV (e.g. see also section 2.4.1 in [2] and [128]). At these energies, the neutron-silicon total cross section is almost determined by the elastic cross section [128], i.e.…”

Section: Primary Knock-on Atom and Displacement Cascadementioning

confidence: 99%

“…see also section 2.4.1 in [2] and [128]). At these energies, the neutron-silicon total cross section is almost determined by the elastic cross section [128], i.e. the interactions result in a recoil silicon.…”

Section: Primary Knock-on Atom and Displacement Cascadementioning

confidence: 99%

“…In neutron interactions, the heavy recoil nuclei are of primary importance in determining the amount of damage energy and the permanent damage in silicon (or in any semiconductor). For fast neutrons in the energy range between 50 keV and 14 MeV, relevant reactions (for a discussion see [128]) are the (n, n) or elastic scattering, (n, n ) or inelastic neutron scattering, (n, p) and (n, α). Since in a nuclear reactor spectrum the high-energy part strongly decreases above 3-5 MeV, the elastic scattering (about 1-10 b) is the most likely process to produce displacements (as already mentioned).…”

Section: Neutron Interactionsmentioning

confidence: 99%

“…of the non-ionization energy-loss, has been primarily based on experimental data (e.g. see [93,128,[140][141][142][143] and references therein). Furthermore, a series of calculations, involving For the Van Ginneken calculation [144] and HGK compilation [145], the displacement energy is E d = 25 eV, for the Huhtinen [20] calculation E d = 20 eV.…”

Section: Damage Functionmentioning

confidence: 99%

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Particle interaction and displacement damage in silicon devices operated in radiation environments

2007

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Silicon is used in radiation detectors and electronic devices. Nowadays, these devices achieving submicron technology are parts of integrated circuits of large to very large scale integration (VLSI). Silicon and silicon-based devices are commonly operated in many fields including particle physics experiments, nuclear medicine and space. Some of these fields present adverse radiation environments that may affect the operation of the devices. The particle energy deposition mechanisms by ionization and non-ionization processes are reviewed as well as the radiation-induced damage and its effect on device parameters evolution, depending on particle type, energy and fluence. The temporary or permanent damage inflicted by a single particle (single event effect) to electronic devices or integrated circuits is treated separately from the total ionizing dose (TID) effect for which the accumulated fluence causes degradation and from the displacement damage induced by the non-ionizing energy-loss (NIEL) deposition. Understanding of radiation effects on silicon devices has an impact on their design and allows the prediction of a specific device behaviour when exposed to a radiation field of interest.

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Section: Primary Knock-on Atom and Displacement Cascadementioning

confidence: 99%

Section: Primary Knock-on Atom and Displacement Cascadementioning

confidence: 99%

Section: Neutron Interactionsmentioning

confidence: 99%

Section: Damage Functionmentioning

confidence: 99%

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Particle interaction and displacement damage in silicon devices operated in radiation environments

2007

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“…TO calculate the number of displaced atoms we used the energy dependence of the damage cross-section D(E,) given by Smith [21] and data on the neutron spectrum in the irradiation position. For neutrons with an energy of above 1 keV the damage cross-section proved to be equal to The effective parameters of the impurity-defect DR's relative to the matrix were estimated on the basis of experimental results by ( 4 ) to ( 6 ) .…”

Section: In Comparison With the Bulk Samples Of Lightly Doped P-silicmentioning

confidence: 99%

Fast-Neutron Radiation Damages in Heavily Doped p-Silicon

Litvinov

Ukhin

1985

phys. stat. sol. (a)

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A model of damage induced by fast neutrons (and other high‐energy particles) in heavily doped semiconductor materials is suggested on the basis of present‐day ideas. It is shown that the nature of damage is determined by the ratio of impurity concentration to defect density in the displacement cascade. If this ratio is greater than unity, an impurity—defect region develops rather than a divacancy one. If the ratio is very high, fast neutrons induce a set of simple defects. Some features of changes in electrical properties of heavily doped p‐silicon films on sapphire irradiated with reactor neutrons are explained in terms of the model.

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System Hardness Design

Messenger¹,

Ash²

1986

The Effects of Radiation on Electronic Systems

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Theoretical and Experimental Determinations of Neutron Energy Deposition in Silicon

Cited by 32 publications

References 12 publications

Particle interaction and displacement damage in silicon devices operated in radiation environments

Particle interaction and displacement damage in silicon devices operated in radiation environments

Fast-Neutron Radiation Damages in Heavily Doped p-Silicon

System Hardness Design

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