Theoretical and experimental investigations on the deposition rate and processes of parallel incident laser-induced CVD

Tate, Atsushi; Jinguji, K.; Takato, N.

doi:10.1007/bf00616500

Cited by 23 publications

(3 citation statements)

References 11 publications

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“…Partial pressures of reactants can be expressed as a function of their molar fractions: (7) where m = a + b is the apparent overall order of the reaction, and P is the total gas pressure. Partial pressures of reactants can be expressed as a function of their molar fractions: (7) where m = a + b is the apparent overall order of the reaction, and P is the total gas pressure.…”

Section: Ratesmentioning

confidence: 99%

CO2 laser chemical vapor deposition of silica films in a parallel configuration: A study of gas phase phenomena

Fernández

González

Pou

et al. 1994

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inOptical emission and mass spectroscopic studies of the gas phase during the deposition of SiO2 and aSi:H by remote plasmaenhanced chemical vapor deposition J. Vac. Sci. Technol. A 7, 1115 (1989); 10.1116/1.576239Laserinduced chemical vapor deposition of hydrogenated amorphous silicon. I. Gasphase process model Low-temperature silicon oxide films were successfully grown using SiHcN20 mixtures by a continuous wave-C0 2 laser tuned at 10.6 /-tm in a parallel configuration. The reaction was initiated by high gas temperatures obtained as a result of multiple successive absorption of photons by silane molecules, followed by energy redistribution through intermolecular collisions. The study of film growth rate and properties as influenced by both total gas pressure and substrate temperature for a gas mole ratio ip= P N 2 d P SiH4 = 30 demonstrated that peak gas temperature controls the deposition rate, revealing that the process is driven by gas phase reactions. For the process, apparent activation energy was determined to be 45 kcallmol, and apparent overall order of the reaction m = -1.5. The gas temperature distribution was calculated by means of a steady-state energy balance in the gas volume, explaining very well the experimental growth rates and the properties of the obtained films.

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Section: Ratesmentioning

confidence: 99%

CO2 laser chemical vapor deposition of silica films in a parallel configuration: A study of gas phase phenomena

Fernández

González

Pou

et al. 1994

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…A C()z laser has also been used to deposit hydrogenated amorphous silicon films from Sif4 [36]. Similarly, silicon dioxide has also been deposited by excimer laser irradiation of mixtures of N20 as the oxidant and either Sif4 or Si2fl6 as the Si source [37].…”

Section: Recommendationsmentioning

confidence: 99%

High-flux solar photon processes

Lorents¹,

Narang²,

Huestis³

et al. 1992

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“…A CO2 laser has also been used to deposit hydrogenated amorphous silicon films from Sill4 [36]. Similarly, silicon dioxide has also been deposited by excimer laser irradiation of mixtures of N20 as the oxidant and either Sill4 or Si2H6 as the Si source [37].…”

Section: Thin and Thick Filmsmentioning

confidence: 99%