Theoretical and Experimental Substractions of Device Temperature Determination Utilizing I-V Characterization Applied on AlGaN/GaN HEMT

Abstract

A differential analysis of electrical attributes, including the temperature profile and trapping phenomena is introduced using a device analytical spatial electrical model. The resultant current difference caused by the applied voltage variation is divided into isothermal and thermal sections, corresponding to the instantaneous time- or temperature-dependent change. The average temperature relevance is explained in the theoretical section with respect to the thermal profile and major parameters of the device at the operating point. An ambient temperature variation method has been used to determine device average temperature under quasi-static state and pulse operation, was compared with respect to the threshold voltage shift of a high-electron-mobility transistor (HEMT). The experimental sections presents theoretical subtractions of average channel temperature determination including trapping phenomena adapted for the AlGaN/GaN HEMT. The theoretical results found using the analytical model, allow for the consolidation of specific methodologies for further research to determine the device temperature based on spatially distributed and averaged parameters.

HEMT Average Temperature Determination Utilizing Low-Power Device Operation

“…The same temperature is supposed to be reached along the device active area corresponding to the average temperature T A [13] small P(t) variation during low-power operation [13], [14] 98 as illustrated in Fig.…”

“…The short-pulsed, long-pulsed, or quasi-static transfer I − V characteristics measured at the same T 0L and V DS are assumed pointing on the same threshold voltage V TH independent on V GS for the trapping free device. Therefore, V TH shift gives opportunity to incorporate time dependent isothermal trapping phenomena under the gate to determine T A [13].…”

“…After rectangular V G S or V DS pulse is applied at the zero time and ambient temperature T 0 = T 0L or T 0 = T 0H , the time t 1 is required for charging device parasitic electric capacitance and free carrier filling. This results in variable dissipated power P(t) = V DS (t)I DS (t) and eligible T A increase [13]. However, 347 in the short time interval t 1 < t < t 2 in the same order as 348 t 1 , due to negligible charge trapping and small P(t) variation, 349 I DS is possible to be approximated by fitting function I DF (t) 350 linearly dependent on T A .…”