Theoretical aspects of diamond films and laser action

Hora, Heinrich; Prelas, M. A.

doi:10.1016/0925-9635(95)00325-8

Cited by 3 publications

(2 citation statements)

References 22 publications

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“…So, to calculate T by (11), it is necessary not only to find A P , B P using (7), but also to estimate the coefficient q 1 . For this, one should proceed from the meaning of q 1 (( 6), (7)), the values of the crystal parameters, and the excitation conditions (e.g., see ( 4)).…”

Section: A1 General Statementsmentioning

confidence: 99%

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Microjoule‐Range Diamond NV‐Laser with Optical Pumping

Genin

Lipatov

Шулепов

et al. 2023

Physica Rapid Research Ltrs

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Laser generation of NV‐centers in diamond with pulse energy up to 48 μJ and efficiency about 1% is performed. Also, we observe strong influence of low‐intensity short‐wavelength irradiation on pulse energy: in presence of this irradiation the pulse energy increased by factor up to 3.5. Additionally, we make an attempt to estimate theoretically our samples’ gain coefficient. GA. Laser generation with pulse energy up to 48 μJ and efficiency about 1% is performed using diamond, containing NV‐centers, as laser active element. Diamond crystal was pumped by 532 by 532 nm radiation. Also, strong influence of low‐intensity short‐wavelength irradiation on pulse energy is observed: in presence of this irradiation the pulse energy increased by factor up to 3.5.

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Section: A1 General Statementsmentioning

confidence: 99%

“…In multiple articles (e.g., refs. [10][11][12][13]) it was theoretically shown that it is possible to obtain laser generation using different color centers in diamond, including NV-center.…”

Section: Introductionmentioning

confidence: 99%

Microjoule‐Range Diamond NV‐Laser with Optical Pumping

Genin

Lipatov

Шулепов

et al. 2023

Physica Rapid Research Ltrs

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Laser-driven ion source for reduced-cost implantation of metal ions for strong reduction of dry friction and increased durability

et al. 1996

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Extensive studies of ion implantation into near surface areas of materials have demonstrated astonishing changes of such properties as surface tension, friction, and durability. The cost of implanted ions is currently rather high due to the limited ion current density of the usual ion sources, especially if ions from sources other than gaseous plasma must be used. The advent of the laser ion source, which offers many orders of magnitude higher current densities than classical ion sources, may change the scenario for a wide range of applications, making ion implantation as crucial a manufacturing technology in the future for other industries as it is today for microelectronics.

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