Theoretical aspects of monocrystal sputtering

Robinson, M. T.

doi:10.1007/3540105212_8

Cited by 56 publications

(9 citation statements)

References 169 publications

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“…Furthermore, in the case of the (111) surface the nearest neighbours are aligned in rows perpendicular to the surface plane, which is also the preferential direction of sputtered atom emission from bcc crystals, as known from experiments [10,11]. Perpendicular emission from a flat surface is the most efficient one for sputtering, as the ability of an atom to escape the surface potential depends on its velocity in the direction of the surface normal [8]. These considerations imply that for the (111) surface the knock-on sputtering mechanisms in single-atom irradiation are already quite efficient.…”

Section: Discussionmentioning

confidence: 97%

“…The experiments by Saidoh and Sone [41] show roughly the same value for 1 keV Mo ions, although the nuclear stopping power at this energy is over a factor of four higher [25] for Mo ions than for Ne ions. In the kiloelectronvolt energy range the channelling of ions is known to have an effect on the sputtering yields [8,9]. To gain a qualitative understanding of the sputtering yields obtained from the simulations, we follow the model by Onderdelinden [9,43] assuming that the channelled fraction of the ion beam does not contribute to the sputtering.…”

Section: Single-atom Irradiationmentioning

confidence: 99%

“…The basic understanding of the sputtering of single-crystalline materials [8][9][10][11] can be summarized with three main conclusions.…”

Section: Introductionmentioning

confidence: 99%

“…Based on experimental results and theoretical considerations, several sputtering mechanisms underlying the emission of atoms from crystalline materials have been proposed and investigated [12][13][14][15][16][17][18]. However, most of the studies of the sputtering of single-crystalline materials in the literature have focused on fcc crystals (see for example the reviews in [8][9][10][11]). For bcc materials, which have important applications as radiation resistant materials, e.g.…”

Section: Introductionmentioning

confidence: 99%

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Effects of the surface structure and cluster bombardment on the self-sputtering of molybdenum

Salonen¹,

Järvi²,

Nordlund³

et al. 2003

J. Phys.: Condens. Matter

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The understanding of different features of the sputtering of materials lies in understanding the factors contributing to the emission of atoms from a regular crystal structure at the surface. Although the sputtering of fcc crystals has received much attention, the database on bcc materials is still scarce. We use molecular dynamics simulations to study the self-sputtering of the (100), (110), (111) and (112) surfaces of molybdenum. Single atoms as well as Mo 2 and Mo 4 clusters are used as the irradiation projectiles, in the cluster energy range of 0.125-4 keV. Contrary to the usual assumption, enhanced (nonlinear) sputtering yields are observed for the cluster bombardments at both ends of the energy range studied. The enhancements can be explained with lower threshold energies for sputtering at low energies and with a decreased fraction of channelled projectile atoms in the kiloelectronvolt energy range.

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Section: Discussionmentioning

confidence: 97%

Section: Single-atom Irradiationmentioning

confidence: 99%

“…The basic understanding of the sputtering of single-crystalline materials [8][9][10][11] can be summarized with three main conclusions.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effects of the surface structure and cluster bombardment on the self-sputtering of molybdenum

Salonen¹,

Järvi²,

Nordlund³

et al. 2003

J. Phys.: Condens. Matter

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“…The third technique has been developed to reduce the effects of channelling. By exposing the device to the ion beam under an incidence angle of 20° (twice the critical angle for channelling; Robinson, 1981), without chemistry assistance, those copper grains that exhibit strong channelling (and therefore slow etching) under normal bombardment are etched faster under off‐normal bombardment (Fig. 9).…”

Section: Improved Etch Selectivity Of Low‐k Coppermentioning

confidence: 99%

Circuit editing of copper and low‐k dielectrics in nanotechnology devices

Mosselveld¹,

Makarov²,

Lundquist³

et al. 2004

Journal of Microscopy

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SummaryCircuit editing of integrated circuit (IC) devices fabricated in 100-nm and smaller technologies has moved IC microsurgery into nanosurgery. Although the dimensions are challenging, an additional challenge is to mill the dielectric materials that are employed controllably. There are interesting biological similarities as carbon content and porosity increase in order to minimize the dielectric constant. These porous organic materials are extremely delicate and are readily carbonized under the ion beam. Besides minimizing carbonization, the etching of these materials must be minimized during the removal of a metallized area. A further challenge has been caused by the continuing tightening of fabrication specifications; the dielectric materials are dispersed (although not randomly) within the metallizations in order to reduce variations during a planarization process. In addition, to improve planarization tolerances, dummy metallizations are placed in regions where the need is only mechanical and not electrical. Neither of these 'extra' structures is readily available to assist in edit planning. To address these dielectrics and the structures in which they are found, several techniques -including chemistries -have been developed. Methods to increase the etching of metallization relative to the dielectric are reviewed, including chemistries that improve the selectivity of copper to dielectric.

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Classical dynamics simulation of projectile-surface interactions

Karolewski

1999

Surf. Interface Anal.

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A public‐domain package of programs for the personal computer, the Simulation Kit (SK), has been developed for the simulation and visualization of collisions of low‐energy (<10 keV) atomic projectiles with solid target lattices. Possible applications of the SK include the simulation of ion scattering spectra, sputtering coefficients, reflection coefficients and projectile ranges. The simulation model used by the SK is based on classical dynamics, and uses a composite screened‐Coulomb/Morse pair potential to model interactions between particles in the target. The simulation model also incorporates inelastic scattering effects based on the Lindhard–Schiøtt–Scharff, Oen–Robinson and Shapiro–Tombrello models, respectively. The physical basis of the simulation model is described, and examples are provided of applications in ion beam analysis (ion scattering spectrometry, sputter yields). Copyright © 1998 John Wiley & Sons, Ltd.

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Theoretical aspects of monocrystal sputtering

Cited by 56 publications

References 169 publications

Effects of the surface structure and cluster bombardment on the self-sputtering of molybdenum

Effects of the surface structure and cluster bombardment on the self-sputtering of molybdenum

Circuit editing of copper and low‐k dielectrics in nanotechnology devices

Classical dynamics simulation of projectile-surface interactions

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