Theoretical Comparison between the Flicker Noise Behavior of Graphene and of Ordinary Semiconductors

Abstract

Graphene is a material of particular interest for the implementation of sensors, and the ultimate performance of devices based on such a material is often determined by its flicker noise properties. Indeed, graphene exhibits, with respect to the vast majority of ordinary semiconductors, a peculiar behavior of the flicker noise power spectral density as a function of the charge carrier density. While in most materials flicker noise obeys the empirical Hooge law, with a power spectral density inversely proportional to the number of free charge carriers, in bilayer, and sometimes monolayer, graphene a counterintuitive behavior, with a minimum of flicker noise at the charge neutrality point, has been observed. We present an explanation for this stark difference, exploiting a model in which we enforce both the mass action law and the neutrality condition on the charge fluctuations deriving from trapping/detrapping phenomena. Here, in particular, we focus on the comparison between graphene and other semiconducting materials, concluding that a minimum of flicker noise at the charge neutrality point can appear only in the presence of a symmetric electron-hole behavior, a condition characteristic of graphene, but which is not found in the other commonly used semiconductors.

The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

“…Figure 4 b shows the typical 1/f noise [ 79 ] in our photodetectors, which is significant impediment to semiconductor industry from new materials. This kind of noise is mainly resulted from the charged impurities and trapping sites in the conductive channel [ 57 , 80 ]. A higher material quality and small structural defect density are desired for reducing the 1/f noise [ 81 ].…”

“…mainly resulted from the charged impurities and trapping sites in the conductive channel [57,80]. A higher material quality and small structural defect density are desired for reducing the 1/f noise [81].…”

High-Performance Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

“…[70] in our photodetectors, which is significant impediment to semiconductor industry from new materials. This kind of noise is mainly resulted from the charged impurities and trapping sites in the conductive channel [53,71]. A higher material quality and small structural defect density are desired for reducing the 1/f noise [72].…”

Effects of A Magnetic Field on the Transport and Noise Properties of a Graphene Ribbon with Antidots

“…Since its envelope-function transport equation is formally equivalent to the relativistic Dirac equation [11][12][13][14], graphene exhibits relativistic effects at velocities much smaller than the velocity of light, such as Klein tunneling and Zitterbewegung [15][16][17][18]. Moreover, it is characterized by peculiar electrical noise characteristics [19][20][21][22]. Furthermore, its behavior in the presence of high magnetic fields is particularly interesting [1,[23][24][25], since it exhibits an "anomalous" quantum Hall effect, observable even at room temperature, with a spectrum of unevenly spaced Landau levels and a Landau level at zero energy.…”