Theoretical demonstration of enhancement of light extraction of flip-chip GaN light-emitting diodes with photonic crystals

Chao, Chia-Hsin; Chuang, Shun Lien; Wu, Tzong–Lin

doi:10.1063/1.2338773

Cited by 51 publications

(28 citation statements)

References 7 publications

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“…Meanwhile the strain relaxation in 3 dimensions suggested in nanostructure materials also lowers the strain induced piezoelectric effect and thus gives higher internal efficiency [6][7][8]. In addition, nanophotonics has been interested in increasing light extraction efficiency through light reflection in the periodic nanostructures [9,10]. Thus, fabrication of periodic and ordered arrays of GaN nanowires and nanorods is important for improving the semiconductor device performance in the application of nanostructured materials.…”

Section: Introductionmentioning

confidence: 98%

GaN based nanorod light emitting diodes by selective area epitaxy

Zang

Chua

2010

Phys. Status Solidi (c)

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Site‐controlled, vertically aligned gallium nitride nanorod light emitting diode (LEDs) arrays with high aspect ratio have been synthesized via catalyst‐free metalorganic chemical vapor deposition. Nanorod LEDs arrays with ∼1 μm in length and ∼200 nm in diameter were prepared on n‐type gallium nitride film on sapphire substrates using nanoporous silicon dioxide as a growth mask patterned by anodized aluminum oxide. GaN nanorod LEDs demonstrate a higher photoluminescence in intensity, compared to that of a planar GaN. This is contributed to the improvement of light extraction due to the faceted nanostructures and the improvement in crystal quality. In addition, more Indium incorporation has been demonstrated compared to the control LEDs structure. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 98%

GaN based nanorod light emitting diodes by selective area epitaxy

Zang

Chua

2010

Phys. Status Solidi (c)

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“…Photonic crystal (PhC) has attracted a great deal of attention to enhance the brightness of light-emitting diodes (LEDs) [1,2]. Both the intensity and the angular distribution of the light extraction can be controlled by engineering the PhC structure fabricated on the light emitting surface, [3,4]. Many reports on the light extraction efficiency have appeared [5][6][7] including the periodic light extraction intensity variation in the plane perpendicular to the chip surface [8].…”

Section: Introductionmentioning

confidence: 99%

Azimuthal anisotropy of light extraction from photonic crystal light‐emitting diodes

Lai

Kuo²,

Chao

et al. 2008

Phys. Status Solidi (c)

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Photonic crystal (PhC) light‐emitting diodes (LEDs) exhibiting anisotropic light extraction have been investigated experimentally and theoretically. It is found that the anisotropic light extraction strongly depends on the lattice constant and orientation. Optical images of the anisotropy in the azimuthal direction are obtained using annular structure with triangular lattice. 6‐fold symmetric light extraction patterns with varying number of petals are observed. More petals in multiple of 6 appear in the observed image with lattice constant increasing. This anisotropic behavior suggests a new means to optimize the PhC design of GaN LED for light extraction. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Moreover, nanophotonics has been interested in increasing light extraction efficiency through light reflection and scattering in the nanostructures [12,13]. Thus, fabrication of GaN based nanostructures is important for improving the semiconductor device performance.…”

mentioning

confidence: 99%

Selective epitaxial growth of nanomesh InGaN MQWs on nanopore arrays of GaN substrate

Zang

Chua

2011

Phys. Status Solidi C

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Nanomesh InGaN/GaN multi‐quantum‐well (MQWs) were grown on nanopore arrays of GaN by metal organic vapour phase epitaxy (MOCVD). The hexagonal nanopore arrays in GaN with average diameter ∼200 nm and wall thickness ∼100 nm was fabricated by inductively couple plasma (ICP) etching using anodic alumina (AAO) template as a mask. Nanoepitaxial GaN is found to deposit on the top surface of nanoporous GaN to form a nanomesh structure, with inverted pyramid at the initial stage and followed by the nano‐pyramid structure. The existence of the inverted pyramid demonstrates the 3D strain relaxation in the GaN layer, which is confirmed by the peak shift in photoluminescence, and diffraction patterns. Better light emission is demonstrated on nanomesh InGaN MQWs, attributed to the improvement of the internal quantum efficiency by the reduction of threading dislocations and the improvement of light extraction efficiency by random scattering at the nanopores in GaN. In addition, more indium incorporation has been demonstrated compared to the control InGaN MQWs, benefiting from the strain relaxation in nanoepitaxial GaN. The nanomesh InGaN/GaN MQWs are beneficial for high efficiency LEDs and future design of emission spectrum of nitride semiconductors for solar cells applications. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Theoretical demonstration of enhancement of light extraction of flip-chip GaN light-emitting diodes with photonic crystals

Cited by 51 publications

References 7 publications

GaN based nanorod light emitting diodes by selective area epitaxy

GaN based nanorod light emitting diodes by selective area epitaxy

Azimuthal anisotropy of light extraction from photonic crystal light‐emitting diodes

Selective epitaxial growth of nanomesh InGaN MQWs on nanopore arrays of GaN substrate

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