Theoretical Design of a Multifunctional Two-Dimensional HfGeTe4 -Based Optoelectronic Device Utilizing the Anisotropic Photogalvanic Effect

Germanium doping effect on the photoelectronic performance of alternating cations in the interlayer space GA(MA)3(Pb1−xGex)3I10

“…Minimizing E loss is pivotal for enhancing V oc and PCE, with typical values ranging from 0.5 to 0.7 eV. 54–58 Here, an E loss value of 0.5 is considered, along with a fill factor ( FF ) of 80%. 18…”