Theoretical design of carrier injection rate and recombination rate in tunnel injection quantum well lasers

IEEE Photonic Society 24th Annual Meeting

Nishinome

et al. 2011

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A quantum well design for controlling of the carrier relaxation process and reducing of the gain damping effect was investigated for improvement of high speed direct modulation semiconductor lasers. The proposed Well-in-Well structure decreases the carrier relaxation time into an active well by carefully designed wave function which relates to the LO phonon scattering rate. The decrease of relaxation time and the increase of modulation bandwidth was analyzed numerically. The reduction of damping factor γ was also demonstrated by experimental measurement of the relative intensity noise spectrum.

Section: Introductionmentioning

confidence: 99%

The reduction of dumping factor at well-in-well quantum well lasers

Higa

IEEE Photonic Society 24th Annual Meeting

Nishinome

et al. 2011

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“…For example of another device, high-speed laser operation requires the reduction in injection time. 19,20) Thus, we must investigate the effects of injection time and carrier reserving on the SOA performance.…”

mentioning

confidence: 99%

Control of carrier reserving and injection for high-speed semiconductor optical amplifier by using a tunnel injection structure

Miyamoto

2014

Jpn. J. Appl. Phys.

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In this study, we explore a new way of controlling the carrier dynamics of semiconductor optical amplifiers (SOAs) by using a tunneling injection structure, which allows for high-speed operation. The proposed SOA uses carrier reserving to compensate for the decreased carriers caused by signal amplification. We can control the SOA operation properties for high-speed signals by adjusting its characteristics of carrier injection from the reservoir layer to the active layer. Numerical simulations showed that this structure has the potential to suppress signal distortion at a high operation speed of 100 Gbps.

“…TI-QW lasers have been investigated for achieving bistable operation 1) and highspeed direct modulation. 6,7) In addition, the TI-QW semiconductor optical amplifier is also expected to be effective for reducing the pattern effect of the high-speed bitsequence. 8) We have also reported a kink characteristic in the light output versus current (L-I) curve of TI-QW lasers.…”

mentioning

confidence: 99%

Large Kink Characteristics in Light Output of Tunnel Injection Quantum Well Lasers

Higa

Nakajima

et al. 2011

Jpn. J. Appl. Phys.

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A large kink in the light output versus current characteristics was observed in semiconductor lasers with a tunnel injection quantum well structure. The output power was changed from 13 to 1.9 mW under a small current increase of 0.06I th (30 mA). The peak-to-valley (P/V) ratio of the output power was as high as 6.8. The kink current and the P/V ratio changed greatly within a monolayer thickness variation of the tunnel injection well. The kink mechanism that can be assumed was presented on the basis of the threshold current and the threshold voltage characteristics of the experimental results.