Theoretical design of mid-infrared interband cascade lasers in SiGeSn system

Li, Yuan; Song, Zhigang; Li, Zeyu; Sun, Greg; Tan, Chuan Seng; Fan, Wenhui; Wang, Qi Jie

doi:10.1088/1367-2630/ab9c67

Cited by 4 publications

(1 citation statement)

References 38 publications

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“…It is generally acknowledged that the QW could be applied to the laser structures to improve their device performance [95][96][97][98][99][100][101][102][103][104][105]. Generally, the MQW structure is adopted to achieve the sufficient gain.…”

Section: Lasersmentioning

confidence: 99%

SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review

Olorunsola¹,

Said²,

Ojo³

et al. 2022

J. Phys. D: Appl. Phys.

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Recent studies of SiGeSn materials and optoelectronic devices hold great promise for photonics integrated circuits (PICs) on Si platform featuring scalable, cost-effective, and power-efficient. Thanks to the breakthrough of low temperature material growth techniques, device-quality level materials have been grown, following by the demonstration of light-emitting diodes, photodetectors, and optically pumped and electrically injected band-to-band lasers. While the exciting developments in bulk devices were reported, the quantum wells (QWs) have been investigated targeting the dramatically improved and/or novel device performance via variety of quantum confinement effects. In this review, we summarize the recent progress on development of SiGeSn QWs, including the fundamental optical and transition studies and optoelectronic device applications. The inspirational results reveal the possibility of all-group-IV PICs with photonics and electronics monolithically integrated on a single-chip.

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Section: Lasersmentioning

confidence: 99%

SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review

Olorunsola¹,

Said²,

Ojo³

et al. 2022

J. Phys. D: Appl. Phys.

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Study of critical optical confinement factor for GeSn-based multiple quantum well lasers

Abernathy

Ojo

Grant

et al. 2022

Applied Physics Letters

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SiGeSn material is of great interest for the development of all-group-IV lasers on a Si substrate. While GeSn-based lasers have been reported worldwide, probing the fundamental limit to lase is highly desirable to reveal the material capability as a gain medium. In this work, three GeSn-based multiple quantum well lasers, with four wells, six wells, and ten wells, were characterized. The four-well device cannot achieve lasing due to the thin active region (thickness of 81 nm), resulting in insufficient optical confinement factor. With thicker active region, both six-well (92 nm) and ten-well (136 nm) devices show clear lasing output. The ten-well sample exhibits a higher lasing temperature of 90 K. The finding of this work reveals the fundamental limit of the required optical confinement factor to achieve lasing for a Fabry–Pérot cavity edge emitting laser devices.

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First-principles study of electronic structure and optical and mechanical properties of SiGeSn alloy

Zhang

Wen

2022

Int. J. Mod. Phys. B

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The unique optical properties of SiGeSn alloy contribute to its remarkable potential in Si photonics applications. In this paper, the first-principles plane-wave super-soft pseudo-potential generalized gradient approximation [Formula: see text] [Formula: see text] method was used to investigate the 96-atom supercell structure of Si[Formula: see text]Ge[Formula: see text]Sn[Formula: see text] ([Formula: see text]) alloy. The lattice constants, electronic structure, mechanical properties and optical properties of the alloy were discussed. Results show that the lattice constant increases, the bandgap width decreases, resist external forces is weakened, and the bulk is easily deformed of Si[Formula: see text]Ge[Formula: see text]Sn[Formula: see text] alloy with the increase in silicon-tin content. The dielectric function, refractive index, and photoconductivity of Si[Formula: see text]Ge[Formula: see text]Sn[Formula: see text] alloy vary with the concentration of silicon and tin. The increase in silicon-tin concentration leads to an increase in infrared (IR) light absorption, resulting in a red shift. The effective mass of the electron decreases, the effective mass of the hole increases in the alloy, and the ratio [Formula: see text] gradually increases, indicating that the carrier life is prolonged with the increase in Si and Sn concentrations.

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Theoretical design of mid-infrared interband cascade lasers in SiGeSn system

Cited by 4 publications

References 38 publications

SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review

SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review

Study of critical optical confinement factor for GeSn-based multiple quantum well lasers

First-principles study of electronic structure and optical and mechanical properties of SiGeSn alloy

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