Rashba–Dresselhaus
effects, which originate from spin–orbit
coupling and allow for spin manipulations, are actively explored in
materials, following the pursuit of spintronics and quantum computing.
However, materials that possess practically significant Rashba–Dresselhaus
effects often contain toxic elements and offer little opportunity
for the tunability of the effects. We used first-principles simulations
to reveal that the recently discovered halide ferroelectrics in the
CsGeX3 (X = Cl, Br, I) family possess large and tunable
Rashba-Dresselhaus effects. In particular, they give origin to the
spin splitting of up to 171 meV in the valence band of CsGeI3. The value is chemically tunable and can decrease by 25% and 70%
for CsGeBr3 and CsGeCl3, respectively. Such
chemical tunability could result in the engineering of desired values
through a solid solution technique. Application of an electric field
was found to result in structural changes that could decrease and
increase spin splitting, leading to electrical tunability of the effect.
In the vicinity of conduction and valence band extrema, the spin textures
are mostly of the Rashba type, which is promising for spin-to-charge
conversion applications. The spin directions are coupled with the
polarization direction, leading to Rashba-ferroelectricity cofunctionality.
Our work identifies lead-free perovskite halides as excellent candidates
for spin-based applications and is likely to stimulate further research
in this direction.