Theoretical Investigation of an Equivalent Laser LET

Correlation of Heavy-Ion and Laser Testing on a DC/DC PWM Controller

“…This is reasonable because the 750 nm wavelength requires the least energy to have the same LET compared with other wavelengths, since the absorption coefficient of the 750 nm wavelength laser exceeds those of the other three wavelengths. This was also proved theoretically in [15], in which the equivalent laser LET equations are listed below as (2), (3) Where, L e is equivalent laser LET E L is laser energy per pulse K e is equivalent coefficient T is transmission coefficient E p is average energy to generate one hole-electron pair E γ is energy of the photon α is absorption coefficient d is the device sensitive depth to the laser…”

Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models

“…so the final equation that relates the power density and the pair generation rate is obtained: The energy E las has to be corrected with a transmission factor T trans to consider the device silicon interface, resulting in the final pair generation rate for pulse laser interaction with the silicon device [5] where a is the photoelectric absorption coefficient, T is the silicon surface transmission coefficient, h is the Planck constant, v is the photon frequency, E las is the laser pulse energy, t las is the pulse duration and w(z) is the longitudinal dependence of the beam radius.…”

“…The radial initial distribution of the EHP plasma is different for each mechanism; however, ambipolar expansion quickly compensates the geometrical differences [35]. Thus, for computational purposes, it can be said that the ion hit and the laser pulse creates similar transport dynamics in the device, provided that their total pair production are the same [5]: Z g las ðr; z; tÞ dV dt ¼ Z g ion ðr; z; tÞ dV dt ð23Þ…”

“…In this sense, some analytical models that relate ion and laser characteristics have been developed [5]. These models establish relations between analytical equations from the premise that a single event occurs when a critical charge value is achieved.…”

Identification of some key parameters for photoelectric laser simulation of IC: an experimental approach

“…The capability of experimentally simulating this effect using a laser has been Proceedings of 12 th IPFA 2005, Singapore investigated by Buchner [11]. To simulate correctly the heavy ion-ICs interaction, it has been demonstrated that the pulse duration has to be less than 1 picosecond [12]. The laser beam energy level is determined in order to obtain effects inside the IC equivalent to heavy ions.…”