2019
DOI: 10.1088/1361-6641/ab0148
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Theoretical investigation of anti-index guiding inactively Q-switched two-section diode lasers

Abstract: We present a new theoretical design for diode lasers which should be capable of generating sub-100-ps pulses with pulse energies of more than 10 nJ per 100-μm-contact width by active Q-switching. We show that the carrier-induced reduction of the refractive index in the active layer, i.e. the vertical anti-index guiding effect, results in a dependence of the optical confinement factor on the carrier density which can be exploited for a further enhancement of the pulse energy and a reduction of the pulse length.

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Cited by 2 publications
(6 citation statements)
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“…The principle of pulse generation is active Q-switching as in [5]. If the switch section is unbiased, it prevents lasing even if a large current I g (gain current) is injected into the gain section.…”
Section: Laser Setupmentioning
confidence: 99%
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“…The principle of pulse generation is active Q-switching as in [5]. If the switch section is unbiased, it prevents lasing even if a large current I g (gain current) is injected into the gain section.…”
Section: Laser Setupmentioning
confidence: 99%
“…For the simulations we use a rate equation model as already presented in [5,18,19] consisting of coupled ordinary differential equations for the excess carrier densities N g and N s in the gain and switch sections, respectively, and the optical power P uniformly distributed along the whole cavity…”
Section: Theoretical Modelmentioning
confidence: 99%
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