2018
DOI: 10.1002/pssa.201800476
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Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001)

Abstract: Surface reconstructions of submonolayer InAs grown on GaAs(001) are investigated using ab initio pseudopotential calculations. Decreasing As chemical potential, calculated formation energies as a function of As chemical potential reveals that the surface reconstructions change from (4 Â 3) with one In-As and two As dimers at InAs coverage θ ¼ 0.71 monolayer (ML) to (2 Â 4) at θ ¼ 1.38 ML via c(4 Â 4) with two In-As and one As dimers at θ ¼ 0.88 ML. It should be noted that the (4 Â 3) with two In-As and one As … Show more

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