Theoretical investigations of [110] IV-VI lead salt edge-emitting lasers

Lu, Xiaoliang; Shi, Zhisheng

doi:10.1109/jqe.2004.841607

Cited by 9 publications

References 17 publications

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Edge-Emitting Lead Salt Mid-Infrared Laser Structure on BaF2 (110) Substrate

Mukherjee

et al. 2009

Journal of Elec Materi

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A lead salt mid-infrared laser sample grown by molecular-beam epitaxy (MBE) on a polished BaF 2 (110) substrate is studied. For improving the laser performance at higher operating temperature, a method of substrate transfer from a BaF 2 substrate to a copper heat sink is developed. The cleaved facet along the {100} plane, which is helpful for the formation of a Fabry-Pérot resonant cavity on the laser sample, is observed. Pulsed photoluminescence measurements are conducted on the laser sample step by step during processing in order to trace the effect of each process step.

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Edge-Emitting Lead Salt Mid-Infrared Laser Structure on BaF2 (110) Substrate

Mukherjee

et al. 2009

Journal of Elec Materi

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Molecular Beam Epitaxy of IV–VI Compounds

Lambrecht

Weng

Shi

2016

Reference Module in Materials Science and Materials Engineering

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Optically pumped mid-infrared light emitter on silicon

Elizondo

Sow

et al. 2007

Journal of Applied Physics

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Characterization of a IV-VI semiconductor structure consisting of a PbSe/PbSrSe multiple quantum well (MQW) active region between distributed Bragg reflectors grown by molecular beam epitaxy on a Si(111) substrate is described. Pulsed photoluminescence (PL) spectra exhibited interband electronic transition energies ranging linearly with temperature from 231.4 meV at 150 K to 299.4 meV at 300 K, while continuous wave (cw) PL spectra exhibited only the vertical optical cavity mode with emission varying between 299.2 meV at 150 K to 301.1 meV at 300 K. A maximum PL emission power of approximately 1.8 mW was obtained for cw diode laser pumping when the heat sink temperature was 200 K. Data are consistent with a localized epilayer heating effect of about 100 deg where the interband electronic transition energy is coincident with the vertical optical cavity mode. In spite of significant sample heating and associated thermal expansion mismatch stress, cw PL emission intensity was stable with no noticeable degradation in intensity after repeated measurements. These results show that IV-VI epitaxial layers on silicon are viable materials for fabricating reliable light emitters for on-chip optical interconnects.

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Theoretical investigations of [110] IV-VI lead salt edge-emitting lasers

Cited by 9 publications

References 17 publications

Edge-Emitting Lead Salt Mid-Infrared Laser Structure on BaF2 (110) Substrate

Edge-Emitting Lead Salt Mid-Infrared Laser Structure on BaF2 (110) Substrate

Molecular Beam Epitaxy of IV–VI Compounds

Optically pumped mid-infrared light emitter on silicon

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