Theoretical investigations on enhancement of photovoltaic efficiency of nanostructured CZTS/ZnS/ZnO based solar cell device

Vallisree, S.; Thangavel, R.; Lenka, Trupti Ranjan

doi:10.1007/s10854-018-8715-y

Cited by 32 publications

(10 citation statements)

References 29 publications

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“…The optimum thicknesses of absorber layers of CIGS, CISSe and CZTS-based solar cells were 2500, 3000 and 3000 nm respectively which were close to the thicknesses found in the literatures [6,9,46]. At their corresponding optimum thicknesses, CIGS, CISSe and CZTS-based solar cells had PCEs of 15.65%, 19.73% and 16.92% respectively.…”

Section: Effect Of the Absorber Layer And Buffer Layer Thicknesssupporting

confidence: 81%

“…Different studies have been carried out with the aim to offset the first generation thick crystalline silicon (Si) film-based [2] photovoltaic technology due to the high cost, energy-intensive manufacturing process of silicon in bulk [3] and consequently, the study of second generation solar cell based on thin film technology using semiconductor material such as copper indium gallium selenide (CIGS), copper zinc tin sulfide (CZTS) [4] etc has started. 13% market share consists of amorphous silicon, quantum dots, polycrystalline cadmium telluride (CdTe) thin films and CIGS solar cells [5] and reduced manufacturing costs, high conversion efficiency and also, outstanding stability in different conditions are mandatory for increasing this market share [6]. Si-based solar cell has achieved up to 24.5% efficiency, whereas CdTe-based solar cell has achieved around 21% [7] .…”

Section: Introductionmentioning

confidence: 99%

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Numerical simulation of CIGS, CISSe and CZTS-based solar cells with In₂S₃ as buffer layer and Au as back contact using SCAPS 1D

Ashraf

Alam

2020

Eng. Res. Express

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A solar cell capacitance simulator named SCAPS 1D was used in the prediction study of Cu(In, Ga)Se2 (CIGS), CuIn(S, Se)2 (CISSe) and Cu2ZnSnS4 (CZTS) based solar cells where indium sulphide (In2S3), fluorine-doped tin oxide/FTO (SnO2:F) and gold (Au) were used as buffer layer, window layer and back contact respectively. We investigated the effect of thickness, defect density and carrier density of the different absorber layers, thickness of the buffer layer and at 300 K temperature and standard illumination, the optimum devices revealed highest efficiencies of 18.08%, 22.50%, 16.94% for CIGS, CISSe, CZTS-based cells respectively. Effect of operating temperature, wavelength of light and electron affinity of the buffer layer on the optimized solar cell performance was also observed. Moreover, simulations were run with tin (Sn) doped In2S3 buffer layer to see the change in electrical measurements in comparison with undoped condition and also, investigation was carried out by replacing In2S3 buffer layer with traditional cadmium sulphide (CdS) buffer layer with the aim of comparing their respective output parameters. All these simulation results will provide some vital guidelines for fabricating higher efficiency solar cells.

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Section: Effect Of the Absorber Layer And Buffer Layer Thicknesssupporting

confidence: 81%

Section: Introductionmentioning

confidence: 99%

Numerical simulation of CIGS, CISSe and CZTS-based solar cells with In₂S₃ as buffer layer and Au as back contact using SCAPS 1D

Ashraf

Alam

2020

Eng. Res. Express

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“…The thickness of CZTS layer is reduced to 100 nm (case “c” of Figure 8B) to obtain current matching with the bottom cell after the replacement of buffer layer. The optimized thickness of ZnS layer is considered as 30 nm 16 for minimizing the photon losses, and the current density is increased (case “d” of Figure 8B). Further, to minimize the parasitic absorption, the window layer thickness is reduced slightly to 300 nm in case “e.” Owing to the presence of ITO layer which itself can act as a window layer for the bottom cell, the AZO window layer is eliminated from the design in case “f” resulting in more efficient absorption by top and bottom absorbers (case “e” and “f” of Figure 8B), and the current matching is not disturbed with an increase in current density.…”

Section: Resultsmentioning

confidence: 99%

“…The single‐junction and the dual‐junction simulations are carried out using ATLAS 2D simulator 15 where the Poisson's equation and carrier continuity equations are self consistently solved to evaluate the potential at each and every mesh point. SRH recombination mechanism is used to obtain the recombination statistics 15,16 to account for the phonon transitions and radiative recombination is incorporated for direct band gap materials by specifying the radiative recombination rate coefficient. Auger recombination is considered for both top and bottom cell absorber materials.…”

Section: Simulation Approachmentioning

confidence: 99%

Modeling and performance optimization of two‐terminal Cu ₂ ZnSnS ₄ –silicon tandem solar cells

Vallisree¹,

Thangavel

Lenka

2021

Int J Energy Res

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Summary A dual‐junction Cu2ZnSnS4–Silicon (CZTS–Si)‐based tandem configuration is modeled and analyzed for its viability as a solar cell. The top and bottom modules in the tandem structure are validated by comparison with experiment. Initially, the designed tandem structure yields very low efficiency of 3.18%, and the various loss mechanisms are identified and investigated. The current mismatch between top and bottom cells and parasitic absorption (photon losses) are suggested to be the major causes limiting the short circuit current and hence the efficiency of the device. We optimize the material parameters within experimentally achievable limits in order to obtain current matching, and the optimized thicknesses of copper zinc tin sulfide (CZTS) and silicon (Si) absorbers are found to be 150 nm and 250 μm, respectively. The simulation results revealed that the photon losses are reduced, and overall absorption in the longer wavelength region has enhanced with the replacement of cadmium sulfide (CdS) by zinc sulfide (ZnS) buffer and careful optimization of the front layers of the device. The maximum predicted efficiency of tandem structure is >20% by minimizing the recombination centers within the experimentally obtainable ranges and improving the carrier separation process.

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“…In this simulation, different values of acceptor density (NA) are chosen from 1 × 10 12 cm -3 to 1 × 10 19 cm -3 to comprehend how they impact PSC performance. layer reduces depletion gap and enhances electric field (Meher et al 2016;Vallisree et al 2018). According to Fig.…”

Section: Impact Of Varying the Density Of Active Layermentioning

confidence: 99%

STO-Enabled Double Perovskite Solar Cell Incorporating (FA) 2 BiCuI 6 as Absorber Material Without HTL

Yadav,

Lohia,

Sahu

2023

Preprint

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In this study, an environmental friendly heterostructure perovskite solar cell is constructed using non-toxic, lead-free double perovskite material (FA)2BiCuI6 as an active layer. The proposed device architecture is FTO/STO/(FA)2BiCuI6/GO/Pd. An extensive theoretical analysis and optimization is conducted using SCAPS-1D simulation tool. The thickness of absorber layer, shallow acceptor density, back metal contact and operating temperature are varied to optimize performance parameter of device. Optimized results have been observed at 700 nm absorber thickness for shallow acceptor density 1.0 × 1019 cm− 3 and 300 K operating temperature. A small value of series resistance 1 Ω cm2 along with high shunt resistance 100000 Ω cm2 is incorporated from the initial condition. The solar cell characteristics obtained are as open circuit voltage 1.10 V, short circuit current density 26.03 mA/cm2, fill factor 86.62 %, and device power conversion efficiency 24.69 %. The study concludes that the metal-work function can be carefully modulated to further enhance the performance characteristics of a device. Further current density–voltage characteristics (J-V), capacitance-voltage (C-V), and capacitance-frequency (C-f) characteristics have also been studied to explore the electrical characteristics of device. These findings suggest that a thorough analysis of materials could lead to their potential use as a high-performance active material for solar applications.

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Theoretical investigations on enhancement of photovoltaic efficiency of nanostructured CZTS/ZnS/ZnO based solar cell device

Cited by 32 publications

References 29 publications

Numerical simulation of CIGS, CISSe and CZTS-based solar cells with In₂S₃ as buffer layer and Au as back contact using SCAPS 1D

Numerical simulation of CIGS, CISSe and CZTS-based solar cells with In₂S₃ as buffer layer and Au as back contact using SCAPS 1D

Modeling and performance optimization of two‐terminal Cu ₂ ZnSnS ₄ –silicon tandem solar cells

STO-Enabled Double Perovskite Solar Cell Incorporating (FA) 2 BiCuI 6 as Absorber Material Without HTL

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Theoretical investigations on enhancement of photovoltaic efficiency of nanostructured CZTS/ZnS/ZnO based solar cell device

Cited by 32 publications

References 29 publications

Numerical simulation of CIGS, CISSe and CZTS-based solar cells with In2S3 as buffer layer and Au as back contact using SCAPS 1D

Numerical simulation of CIGS, CISSe and CZTS-based solar cells with In2S3 as buffer layer and Au as back contact using SCAPS 1D

Modeling and performance optimization of two‐terminal Cu 2 ZnSnS 4 –silicon tandem solar cells

STO-Enabled Double Perovskite Solar Cell Incorporating (FA) 2 BiCuI 6 as Absorber Material Without HTL

Contact Info

Product

Resources

About

Numerical simulation of CIGS, CISSe and CZTS-based solar cells with In₂S₃ as buffer layer and Au as back contact using SCAPS 1D

Numerical simulation of CIGS, CISSe and CZTS-based solar cells with In₂S₃ as buffer layer and Au as back contact using SCAPS 1D

Modeling and performance optimization of two‐terminal Cu ₂ ZnSnS ₄ –silicon tandem solar cells