Theoretical modeling and experimental investigation of MIS radiation sensor with giant internal signal amplification

Charge‐injection photogate pixel fabricated in CMOS silicon‐on‐insulator technology

“…V inv = 3 V. Although it could generate some minor image-lag effects, this concept of external generation of a 'fat zero', borrowed from the CCD technology, is followed here as proposed in [4]. The SOI CI-PG pixel photodetector was simulated using (Synopsys) TCAD software tools, and the results obtained in the form of a 2-D electrostatic potential profile can be observed in Figure 2 under exposure to incoming radiation.…”

“…The SOI CI-PG relaxation time is in this case T relax ≈ 700 s. After a certain reset period, the device is ready to receive the next signal peak. The mathematically modelled (applying a mathematical model similar to the one proposed in [4]) photogenerated charge collection current, together with the corresponding readout current, sensed at a (500×500 m 2 ) SOI CI-PG photodetector, assuming a minority carrier generation time inside the handle-wafer silicon bulk to be g = 0.5 ms [5], and the recombination time of the minority holes r = 10 s [5], can be observed in Figure 4 [3]. In Figure 4, the theoretical results corresponding to two operating conditions can be observed, on one side, when the PG is illuminated by 0.18 W (500 lx) of green light ( = 555 nm) impinging radiant flux, and on the other when operating in dark.…”

“…It arises due to the significantly longer T int = 20 ms when compared with T readout = 1.4 s, using R L = 1 k . The 'time-compression' amplification factor exhibits a direct linear dependence on the T int /T readout ratio [4], and an inverse exponential dependence of the R L C OX factor [3]. It also exhibits an inverse exponential dependence on the amount of charge accumulated in the potential well at the beginning of the photodetector output phase, i.e.…”

SOI pixel detector based on CMOS time-compression charge-injection

“…As presented in [1], we use the "time compression" parametric amplification [2], which is caused by the combination of long integration and short readout times when using Charge Injection Devices (CID) [3] operation principle. Just as in the PG pixel configuration, the charge is integrated in the SCR generated beneath the photogate when biased at V int =-15V, during the T int =20ms.…”

Temperature cycling of MOS-based radiation sensors

“…MOS capacitor-based integrating photodetectors have been fabricated for highly sensitive measurements [10]. Response of RadFETs to high fluences of fast neutrons [11] and Proton irradiation [12,13] have also been studied for different energy regions.…”