Theoretical performance of novel multipliers at millimeter and submillimeter wavelengths

Tolmunen, Timo J.; Frerking, M. A.

doi:10.1007/bf01008554

Cited by 16 publications

(6 citation statements)

References 21 publications

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“…A key challenge is to provide such frequency multiplication in a way that most of the energy is confined in the target frequency as often additional unwanted harmonics are generated 5 . Such harmonic generation leads to low conversion efficiencies.…”

Section: Frequency Multiplicationmentioning

confidence: 99%

“…While it is possible to compensate for those effects with additional circuitry, this would largely increase area and power overheads. One approach to avoid higher order generation is the exploitation of symmetric device characteristics 5 . Given a perfect parabolic relation between the output and input of the device:…”

Section: Frequency Multiplicationmentioning

confidence: 99%

“…From there it follows that perfect parabolic transfer characteristics lead to a perfect doubling of the frequencies without the generation of higher order harmonics 35 . Consequently, devices providing a symmetric parabolic output have been studied intensively, including Schottky FETs 36 , resonant tunnel diodes 5 , graphene FETs 32,37 , carbon nanotube (CNT) FETs 35 , and ferroelectric (FE) FETs 33,38 . Especially semimetallic graphene devices have been proposed as promising material for frequency doubling, due to their high-current throughput and large achievable gains 34,39,40 .…”

Section: Frequency Multiplicationmentioning

confidence: 99%

“…Another example is the integration of analog functionalities into the digital system, like mmWave/radar processing needed for automotive application 4 . A further increase in functional density is expected from the co-integration of emerging devices, whose functionality goes beyond that of classical MOSFETs such as resonant tunnel diodes 5 and single-electron transistors 6 .…”

mentioning

confidence: 99%

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Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor

et al. 2022

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Reconfigurable field effect transistors are an emerging class of electronic devices, which exploit a structure with multiple independent gates to selectively adjust the charge carrier transport. Here, we propose a new device variant, where not only p-type and n-type operation modes, but also an ambipolar mode can be selected solely by adjusting a single program voltage. It is demonstrated how the unique device reconfigurability of the new variant can be exploited for analog circuit design. The non-linearity of the ambipolar mode can be used for frequency doubling without the generation of additional harmonics. Further, phase shifter and follower circuits are enabled by the n- and p-type modes, respectively. All three functions can be combined to create a 3-to-1 reconfigurable analog signal modulation circuit on a single device enabling wireless communication schemes. Both, the concept as well as the application have been experimentally demonstrated on industrial-scale fully-depleted SOI platform. The special transport physics in those structures has been analyzed by TCAD simulations as well as temperature dependent measurements.

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Section: Frequency Multiplicationmentioning

confidence: 99%

Section: Frequency Multiplicationmentioning

confidence: 99%

Section: Frequency Multiplicationmentioning

confidence: 99%

mentioning

confidence: 99%

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Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor

et al. 2022

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“…JPL is currently working with MTT Lincoln Laboratory on these devices. Substantial progress in the theory of these new devices has recently been made 23 .…”

Section: Current Snhmillimeter Wave Technologymentioning

confidence: 99%

Applications of submillimeter wave technology for SDI

Kile¹,

McGrath

Leduc

et al. 1992

Annual Interceptor Technology Conference

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This paper examines the potential use of using submillimeter wave technology (actually 3 mm to 100 pm, or frequencies between 100 GHz and 3 THz) for SDI applications, especially for endo-KEW systems. We start with the requirements and functions for a multipurpose weapon sensor. Our emphasis is on active sensors, but certain elements of passive sensors are mentioned that could play an important role. The rest of the paper provides information on the state-of-the art in submillimeter wave technology, especially current component activity, and future plans.

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