In this paper, a uniformly distributed wide-band metal-oxide-semiconductor field-effect transistor (MOSFET) model constructed by several same unit cells in parallel is presented. The kink phenomenon of scattering parameter S 11 due to the distributed gate-resistance of MOSFETs can be fitted well by this model. Good agreement between the measured and modeled results of scattering parameters S 22 , current gain H 21 , and unilateral gain U are also demonstrated. In addition, the impact of distributed gate-resistance on cut-off frequency ( f T ) and maximum oscillation frequency ( f max ) performances of single gatefinger MOSFETs with large gate-width of 20, 40, 80, 120, and 160 mm are quantitatively characterized and analyzed.