Theoretical study of electronic properties of resonant tunneling diodes based on double and triple AlGaAs barriers

Almansour, Shaffa

doi:10.1016/j.rinp.2020.103089

Cited by 8 publications

(6 citation statements)

References 32 publications

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“…The current density increases linearly and reaches its peak at 0.015 V and then decreases rapidly similar to the simulated graph in double barrier RTD and achieves a minimum at 0.06 V. However, the peak current density is much lower in triple barrier RTD. Similar observations were also made by Almansour [19] where they found the peak to be at 0.01 V for triple barrier RTD. Also, the slope of current density obtained in Figure 7(A) is higher than the slope obtained in Figure 3(A).…”

Section: Current Densitysupporting

confidence: 86%

“…The peak current density is approximated to 3,165 A/cm 2 at 0.2 V whereas the peak current density as observed by Almansour is to 4,336 A/cm 2 at 0.225 V [19]. The valley current density is approximated to 1,286 A/cm 2 at 0.3 V whereas the valley current density as observed by Almansour [19] is 1,860 A/cm 2 .…”

Section: Current Densitymentioning

confidence: 67%

“…PDR 1 region as depicted is from 0 to approximately 0.2 V, whereas the PDR 2 region is above 0.3 V. The NDR region is sandwiched between the 2 PDR regions [2]. The peak current density is approximated to 3,165 A/cm 2 at 0.2 V whereas the peak current density as observed by Almansour is to 4,336 A/cm 2 at 0.225 V [19]. The valley current density is approximated to 1,286 A/cm 2 at 0.3 V whereas the valley current density as observed by Almansour [19] is 1,860 A/cm 2 .…”

Section: Current Densitymentioning

confidence: 74%

“…Almansour and Dakhlaoui [18] studied the effect of applied bias on current density. Almansour [19] theoretically studied the electronic properties of double barrier and triple barrier RTD. Optical and electronic transport properties of AlSb/GaInAsSb double barrier RTD had been investigated in [20].…”

Section: Introductionmentioning

confidence: 99%

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Simulation and Comparative Study of Resonant Tunneling Diode

et al. 2022

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This paper studies and investigates the effect of physical and electrical parameters on double, triple and six barrier resonant tunneling diodes (RTD). The materials used for quantum well and barriers are Gallium arsenide (GaAs) and Aluminium gallium arsenide (AlGaAs), respectively. The parameters that were reasoned and studied include conduction band, current density, transmission coefficient and resonance energy. The above parameters were studied by changing bias voltage, temperature, barrier width and doping concentration. From the simulations performed it is observed that for double barrier RTD the peak current density is observed at 0.2 V and the valley current density is observed at 0.3 V, whereas for a triple barrier RTD the peak current density is observed at 0.015 V and the valley current density is observed at 0.06 V. The value of transmission coefficient for double barrier RTD decreases especially after bias applied is more than resonant bias (0.2 V). The effect of increasing bias leads to a decrease in the resonance level in the conduction band. The width of resonance energy decreases with the increase in barrier width. With increase in number of barrier the number of resonance level increases which leads to an increasing peaks in the transmission coefficient curve. The effect of increasing temperature leads to higher current and more resonance energy. With the thickening of barrier width, less transmission of electrons occurs leading to a reduced current density. When the barriers are increased the negative differential region (NDR) is achieved at low voltages. HIGHLIGHTS This paper studies and investigates the effect of physical and electrical parameters on double, triple and six barrier resonant tunneling diodes (RTD) The parameters include conduction band, current density, transmission coefficient, and resonance energy The parameters were studied by changing bias voltage, temperature, barrier width, and doping concentration It is observed that for double barrier RTD the peak current density is observed at 0.2 V and the valley current density is observed at 0.3 V For a triple barrier RTD the peak current density is observed at 0.015 V and the valley current density is observed at 0.06 V GRAPHICAL ABSTRACT

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Section: Current Densitysupporting

confidence: 86%

Section: Current Densitymentioning

confidence: 67%

Section: Current Densitymentioning

confidence: 74%

Section: Introductionmentioning

confidence: 99%

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Simulation and Comparative Study of Resonant Tunneling Diode

et al. 2022

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“…Simultaneously, Encomendero et al [ 16 ] investigated the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric resonant injection; they found negative differential conductance (NDC) under both bias polarities of GaN/AlN RTDs. Several theoretical works that approach resonant tunneling systems by means of the non-equilibrium Green’s formalism (NEGF) for the calculation of the transmission function have been reported [ 17 , 18 ].…”

Section: Introductionmentioning

confidence: 99%

Study of Electronic and Transport Properties in Double-Barrier Resonant Tunneling Systems

et al. 2022

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Resonant tunneling devices are still under study today due to their multiple applications in optoelectronics or logic circuits. In this work, we review an out-of-equilibrium GaAs/AlGaAs double-barrier resonant tunneling diode system, including the effect of donor density and external potentials in a self-consistent way. The calculation method uses the finite-element approach and the Landauer formalism. Quasi-stationary states, transmission probability, current density, cut-off frequency, and conductance are discussed considering variations in the donor density and the width of the central well. For all arrangements, the appearance of negative differential resistance (NDR) is evident, which is a fundamental characteristic of practical applications in devices. Finally, a comparison of the simulation with an experimental double-barrier system based on InGaAs with AlAs barriers reported in the literature has been obtained, evidencing the position and magnitude of the resonance peak in the current correctly.

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Self-consistent Analysis for Optimization of AlGaAs/GaAs Based Heterostructure

Paramasivam,

Gowthaman,

Srivastava

2023

J. Electr. Eng. Technol.

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The heterostructures are suitable for developing high-performance electronic and optoelectronic devices. In this work, a significant interest in the design and analysis of compound semiconductor Aluminium Gallium Arsenide (AlGaAs) and Gallium Arsenide (GaAs) heterostructures has been realized. These structures are fabricated with alternating layers of GaAs (a direct bandgap material) and AlGaAs (an indirect bandgap material) and have been used to design a range of high-performance devices, including lasers, solar cells, and field-effect transistors. A 30 nm AlGaAs consisting of a middle layer between two GaAs layers with a GaAs substrate has been reported. This work has been carried out at 300 K utilizing a quantum transport and self-consistent method for the proposed AlGaAs/GaAs one-dimensional heterostructure with a gate length of 2 nm and a voltage varying from 0 to 0.1 V. The measured values of doping density (nd) and electron density (ne) of AlGaAs/GaAs one-dimensional heterostructure are 8.96 × 1011 cm−3 and 2 × 1026 cm−3, respectively. The system response to geometric changes in several parameters has been realized. Hence, confined restricted states were computed using wave functions and energies. The GaAs layer on top of quantum well heterostructure interfaces has been used to modulate the wave functions (eigenstates) resulting in pseudo-one dimensional or small-dimension eigenstates. In this work, a comprehensive analysis of 1D AlGaAs/GaAs heterostructure through benchmarking with several homo-structures (various thicknesses) has been performed.

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Theoretical study of electronic properties of resonant tunneling diodes based on double and triple AlGaAs barriers

Cited by 8 publications

References 32 publications

Simulation and Comparative Study of Resonant Tunneling Diode

Simulation and Comparative Study of Resonant Tunneling Diode

Study of Electronic and Transport Properties in Double-Barrier Resonant Tunneling Systems

Self-consistent Analysis for Optimization of AlGaAs/GaAs Based Heterostructure

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