Theoretical Study of Enhancing the Performance of InP/InGaAs Avalanche Photodiodes with p‐Type‐Doped InP Interposed Layer

Abstract

For InP/InGaAs avalanche photodiodes (APD), there are three important performance parameters: mean gain, excess noise factor, and dark current. Reducing excess noise and dark current is an effective way to achieve higher sensitivity and improve the performance of an APD. In this article, an interposed layer is introduced into the InP/InGaAs avalanche photodiode structure. The results considering dead space indicate that the thin interposed layer structure has lower excess noise factor and dark current at the same mean gain compared with conventional APD structure, which is reduced by ≈34% and 11%, respectively, at mean gain . This provides a feasible idea for the construction of high‐performance APD.