Theoretical Study of Midwave Infrared HgCdTe nBn Detectors Operating at Elevated Temperatures

Akhavan, Nima Dehdashti; Jolley, Greg; Umana‐Membreno, Gilberto A.; Antoszewski, J.; Faraone, Lorenzo

doi:10.1007/s11664-015-3764-y

Cited by 20 publications

(7 citation statements)

References 34 publications

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“…Here, E c and E v are the energies of the edges of the conduction and valence bands, E f is the Fermi energy level, and E f, n and E f, p are the energies of nonequilibrium quasi-Fermi levels. Similar results were obtained by other authors [22,23].…”

Section: The Nbn Barrier Structuressupporting

confidence: 93%

Unipolar Semiconductor Barrier Structures for Infrared Photodetector Arrays (Review)

Burlakov

Kulchitsky

Войцеховский

et al. 2021

J. Commun. Technol. Electron.

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We analyze the current state of research in the field of creating unipolar semiconductor barrier structures based on various materials for infrared photodetector arrays, which make it possible to reduce the dark currents and thereby improve the threshold characteristics and ensure operation at high cooling temperatures. The main ways of minimizing a barrier for holes in the valence band are considered by the example of a photosensitive structure based on the n-CMT layer. It is shown that the nBn barrier structures are an alternative for creating photodiode sensing matrices for the mid-and far-infrared photodetector arrays.

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Section: The Nbn Barrier Structuressupporting

confidence: 93%

Unipolar Semiconductor Barrier Structures for Infrared Photodetector Arrays (Review)

Burlakov

Kulchitsky

Войцеховский

et al. 2021

J. Commun. Technol. Electron.

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“…This value is several times smaller than the limiting values determined by numerical simulation [9], which indicates the need for further optim ization of the nBn structure parameters. Detectivity under the same conditions is also slightly inferior to the limiting calculated characteristics of nBn structures (for example, [16,40,41]). Note that the responsivity values of nBn structures based on MBE HgCdTe were not experimentally determined previously.…”

Section: Study Of Dark Current and Discussionmentioning

confidence: 85%

Diffusion-limited dark currents in mid-wave infrared HgCdTe-based nBn structures with Al₂O₃ passivation

Войцеховский

Nesmelov

Dzyadukh

et al. 2019

J. Phys. D: Appl. Phys.

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We present the results of the study of the dark current in the MWIR nBn structure based on n-Hg1−xCdxTe grown by molecular beam epitaxy on a GaAs (0 1 3) substrate. The CdTe content in the barrier layer is 0.84, and its thickness is 210 nm. To suppress the surface current, passivation with an Al2O3 layer formed by plasma-enhanced atomic layer deposition was used. The dark current density at the temperature of 184 K and the voltage bias of −1 V is 3.1 × 10−6 A cm−2. At temperatures higher than 180 K, the total current through the nBn structure is determined by the diffusion component. In the temperature range of 180–300 K, the dark current values correspond well to the empirical model of Rule 07. These values are comparable with the dark current values for modern mid-infrared barrier detectors based on MOCVD HgCdTe and III–V materials. The studied nBn structures have lower dark currents than the previously described analogues based on MBE HgCdTe, which may be associated with high-quality passivation of the side walls of the mesa structure.

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“…The most common configuration for MBE HgCdTe is the nBn configuration, which suppresses dark currents by blocking the electron current with a wide gap barrier B in the conduction band. Theoretical and experimental studies of nBn structures based on MBE n-HgCdTe were carried out and are widely covered, for example, in [12][13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra

et al. 2023

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This work is devoted to a comprehensive experimental study of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe (MCT). Seven different types of photosensitive structures for middle wavelength (MWIR) and long wavelength (LWIR) infrared (IR) radiation ranges grown by molecular beam epitaxy (MBE) have been studied by complex conductivity spectroscopy method. The current-voltage characteristics (CVC) were measured both in the dark and in the presence of illumination. Based on the measured dependences of the dark current density on temperature and the ratio of the perimeter to the area of the structure, the dominant contribution of the bulk current component compared to the surface component for the MWIR structure (x ~ 0.30) was established. This fact was confirmed by the value of the activation energy (from the Arrhenius plots) corresponding to the band gap. The results of frequency measurements of the differential conductivity of MIS structures based on NBνN also give a close activation energy, which corresponds to the diffusion limitation. LWIR structures (x ~ 0.20) are characterized by an increase in the contribution of the surface leakage current in the total dark current. In this case, the activation energy determined from MIS measurements exceeds the band gap of the ν-layer, which is associated with the presence of an energy barrier for holes in the valence band. It is shown that if the problem of passivation of mesa structures is solved, it is possible to fabricate efficient MWIR and LWIR nBn, NBνN detectors based on MBE HgCdTe with high threshold parameters.

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Theoretical Study of Midwave Infrared HgCdTe nBn Detectors Operating at Elevated Temperatures

Cited by 20 publications

References 34 publications

Unipolar Semiconductor Barrier Structures for Infrared Photodetector Arrays (Review)

Unipolar Semiconductor Barrier Structures for Infrared Photodetector Arrays (Review)

Diffusion-limited dark currents in mid-wave infrared HgCdTe-based nBn structures with Al₂O₃ passivation

Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra

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Theoretical Study of Midwave Infrared HgCdTe nBn Detectors Operating at Elevated Temperatures

Cited by 20 publications

References 34 publications

Unipolar Semiconductor Barrier Structures for Infrared Photodetector Arrays (Review)

Unipolar Semiconductor Barrier Structures for Infrared Photodetector Arrays (Review)

Diffusion-limited dark currents in mid-wave infrared HgCdTe-based nBn structures with Al2O3 passivation

Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra

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Diffusion-limited dark currents in mid-wave infrared HgCdTe-based nBn structures with Al₂O₃ passivation