Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

Takeuchi, Tetsuya; Amano, Hiroshi; Akasaki, Isamu

doi:10.1143/jjap.39.413

Cited by 522 publications

(456 citation statements)

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“…We note that the combination of all the above features ͓͑i͒-͑iii͔͒ was not included in the previous attempts [23][24][25][26] to investigate strain in semipolar III-nitride pseudomorphically grown layers. For example, in Refs.…”

Section: Discussionmentioning

confidence: 99%

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Strain-induced polarization in wurtzite III-nitride semipolar layers

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Baker

Nakamura

et al. 2006

Journal of Applied Physics

675

487

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This paper presents growth orientation dependence of the piezoelectric polarization of InxGa1−xN and AlyGa1−yN layers lattice matched to GaN. This topic has become relevant with the advent of growing nitride based devices on semipolar planes [A. Chakraborty et al., Jpn. J. Appl. Phys., Part 2 44, L945 (2005)]. The calculations demonstrate that for strained InxGa1−xN and AlyGa1−yN layers lattice matched to GaN, the piezoelectric polarization becomes zero for nonpolar orientations and also at another point ≈45° tilted from the c plane. The zero crossover has only a very small dependence on the In or Al content of the ternary alloy layer. With the addition of spontaneous polarization, the angle at which the total polarization equals zero increases slightly for InxGa1−xN, but the exact value depends on the In content. For AlyGa1−yN mismatched layers the effect of spontaneous polarization becomes important by increasing the crossover point to ∼70° from c-axis oriented films. These calculations were performed using the most recent and convincing values for the piezoelectric and elasticity constants, and applying Vegard’s law to estimate the constants in the ternary InxGa1−xN and AlyGa1−yN layers.

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Section: Discussionmentioning

confidence: 99%

“…[23][24][25][26]. These studies are based on approaches developed previously for calculation of strain-induced effects in cubic semiconductor QW structures.…”

Section: Introductionmentioning

confidence: 99%

Strain-induced polarization in wurtzite III-nitride semipolar layers

Романов

Baker

Nakamura

et al. 2006

Journal of Applied Physics

675

487

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“…For instance, a strong piezoelectric-field induced polarization effect as a result of InGaN/GaN emitters grown along the polar direction leads to a reduction in overlap between electron and hole wavefunctions and thus a reduced quantum efficiency. [1][2][3] This becomes more severe when emitters move toward longer wavelengths, such as the green and yellow spectral region, generating so-called "green/yellow" gap issue. A further greater barrier to overcoming the "green/yellow" gap is due to an extreme difficulty in enhancing indium incorporation into GaN due to the large lattice mismatch and miscibility between InN and GaN.…”

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Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

et al. 2016

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We demonstrate a great improvement in the crystal quality of our semi-polar (11-22) GaN overgrown on regularly arrayed micro-rod templates fabricated using a combination of industry-matched photolithography and dry-etching techniques. As a result of our micro-rod configuration specially designed, an intrinsic issue on the anisotropic growth rate which is a great challenge in conventional overgrowth technique for semi-polar GaN has been resolved. Transmission electron microscopy measurements show a different mechanism of defect reduction from conventional overgrowth techniques and also demonstrate major advantages of our approach. The dislocations existing in the GaN micro-rods are effectively blocked by both a SiO2 mask on the top of each GaN micro-rod and lateral growth along the c-direction, where the growth rate along the c-direction is faster than that along any other direction. Basal stacking faults (BSFs) are also effectively impeded, leading to a distribution of BSF-free regions periodically spaced by BSF regions along the [-1-123] direction, in which high and low BSF density areas further show a periodic distribution along the [1-100] direction. Furthermore, a defect reduction model is proposed for further improvement in the crystalline quality of overgrown (11-22) GaN on sapphire.

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“…2 The increased transition probability may result in an improved device efficiency leading to increased light output powers and/or reduced threshold current densities. 3 Indeed, the first GaInN based laser diodes with an emission wavelength at 500 nm have been shown by Okamoto et al on m-plane GaN substrates. 4 However, up to now, non-polar GaN substrates are still barely available, small in size, and also very expensive.…”

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Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Jönen

Rossów

Bremers

et al. 2011

Applied Physics Letters

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We report on the optical properties of m-plane GaInN/GaN quantum wells (QWs). We found that the emission energy of GaInN QWs grown on m-plane SiC is significantly lower than on nonpolar bulk GaN, which we attribute to the high density of stacking faults. Temperature and power dependent photoluminescence reveals that the GaInN QWs on SiC have almost as large internal quantum efficiencies as on bulk GaN despite the much higher defect density. Our results indicate that quantum-wire-like features formed by stacking faults intersecting the quantum wells provide a highly efficient light emission completely dominating the optical properties of the structures. V C 2011 American Institute of Physics. [doi:10.1063/1.3607301] In the past few years, GaN-based light emitting devices grown on non-polar planes have continuously attracted increasing attention due to their promising optical properties. While conventional structures grown on the polar c-plane suffer from the quantum-confined Stark effect (QCSE), 1 GaN layers grown on non-polar surfaces are free from polarization fields in growth direction. 2 The increased transition probability may result in an improved device efficiency leading to increased light output powers and/or reduced threshold current densities. 3 Indeed, the first GaInN based laser diodes with an emission wavelength at 500 nm have been shown by Okamoto et al. on m-plane GaN substrates. 4 However, up to now, non-polar GaN substrates are still barely available, small in size, and also very expensive. As an alternative, several groups have reported heteroepitaxial growth of non-polar GaN layers on foreign substrates (c-LiAlO 2 , SiC, r-plane sapphire). [5][6][7] However, most of these structures were affected by high densities of threading dislocations (TDs) and basal plane stacking faults (BSFs), which are terminated by either prismatic stacking faults (PSFs) or partial dislocations. 8 While TDs are known to act as nonradiative recombination centers, BSFs are optically active since they can be considered as cubic (zincblende) ABC phases in the wurtzite ABAB stacking sequence. Such a structure forms a type-II heterojunction which may capture electrons and holes resulting in optical transitions below the wurtzite GaN bandgap energy. 9-11 More recently, a BSF related emission from aplane GaN/AlGaN quantum well (QW) structures was reported, suggesting the formation of quantum-wire-like states in the regions where BSFs intersect the QWs. 12,13 In this paper, we investigate the optical properties of m-plane GaInN/GaN QW structures grown on silicon carbide (SiC). In particular, we show that stacking faults intersecting the QWs dominate the optical properties of these structures.Our samples were grown on m-plane 6H-SiC, m-plane bulk GaN substrates, and a-plane GaN templates (grown by hydride vapor phase epitaxy) in a low pressure metalorganic vapor phase epitaxy system with a horizontal reactor (Aixtron AIX 200RF). The precursors used were trimethylgallium, triethylgallium, trimethylaluminum, trimethylindium,...

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Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

Cited by 522 publications

References 23 publications

Strain-induced polarization in wurtzite III-nitride semipolar layers

Strain-induced polarization in wurtzite III-nitride semipolar layers

Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

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