2020
DOI: 10.1007/978-3-030-43473-1_4
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Theoretical Study of Quantum Well GaAsP(N)/GaP Structures for Solar Cells

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Cited by 2 publications
(2 citation statements)
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“…To make a simulation on strained GaAsxP1-x and tensile train GaNyAsxP1-x-y in the quantum zones that are well active to get it inserted in the solar cells. Chenini et al [29] used the band anticrossing model to explain the dependencies of lower E-and lower E + sub-band energies of the nitrogen concentration. The donor-acceptor approach has been used in this study for preparing low bandgap polymers concluding that the introduction of arsenic into the host material leads to the reduction of the bandgap energy.…”
Section: Review Based Analysismentioning
confidence: 99%
See 1 more Smart Citation
“…To make a simulation on strained GaAsxP1-x and tensile train GaNyAsxP1-x-y in the quantum zones that are well active to get it inserted in the solar cells. Chenini et al [29] used the band anticrossing model to explain the dependencies of lower E-and lower E + sub-band energies of the nitrogen concentration. The donor-acceptor approach has been used in this study for preparing low bandgap polymers concluding that the introduction of arsenic into the host material leads to the reduction of the bandgap energy.…”
Section: Review Based Analysismentioning
confidence: 99%
“…Recent research work done in electricity forecasting and the PV generation domain has been reviewed and analysed to select the best model and find novel approaches [28][29][30]. One of the most relevant novelties of the paper is an analysis of the state of the art performed in three different phases, that has not been found in the current literature:…”
Section: Introductionmentioning
confidence: 99%