Theoretical study of spectral responses of heterojunctions based on CuInSe2 and CuInS2

Keita, E. M.; Ndiaye, Bara; Dia, M.; Tabar, Yousef Rezaei; Sène, C.; Mbow, B.

doi:10.23647/ca.md202005

Cited by 2 publications

(5 citation statements)

References 4 publications

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“…On figure 1 we represent the optical absorption coefficients of the different materials and the ZnO reflection coefficient [1,9,11].…”

Section: Methodsmentioning

confidence: 99%

“…These two materials usually doped p, have quite similar crystalline parameters, band gaps suitable for solar cell operations (in the order of 1.04 eV for CuInSe 2 and 1.57 eV for CuInS 2 ). The ZnO and CdS layers are doped n by Al for ZnO and In for CdS, due to their high band gaps they are generally used as window layers to allow light to pass through in the absorption range of CuInS 2 and CuInSe 2 [1][2][3][4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Short-Circuit Photocurrent Density Determination of Chalcopyrite Solar Cells and Study of Basic Parameters Under AM0, AM1, AM1.5 Spectra

Keita¹,

Correa²,

Faye³

et al. 2021

SJEE

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In this work we present a method to evaluate the short-circuit photocurrent density delivered by a solar cell by and study basic parameters which are at the origin of the latter by considering the solar spectra AM0, AM1 and AM1.5. This photocurrent density is the greatest current density that the cell can supply according to the considered parameters for a given illumination. We apply this method to a 4-layer model composed of absorber materials based on chalcopyrite semiconductors (CuInSe 2 and CuInS 2 ) and based on a wide band gap window layers (ZnO and CdS) according to the model ZnO(n + )/CdS(n)/CuInS 2 (p)/CuInSe 2 (p + ) (model n + /n /p/p + ). For this model the CuInS 2 and CuInSe 2 layers are named respectively base and substrate. We exploit continuity equation that governing charge carriers transport in semiconductor materials and use Newton's quadrature integration method over the entire solar spectrum ranging from 1 eV to 4 eV. For this calculation, we have found values of the short-circuit photocurrent density equal to 24.5 mA.cm -2 , 19.3 mA.cm -2 , 17.5 mAcm -2 respectively for the spectra AM0, AM1 and AM1.5 for the used parameters. The same principle of calculation and reasoning is used to determine and study under a given solar spectrum some intrinsic basic parameters such as the generation rate of carriers, the densities of minority carriers generated and the resulting photocurrents versus the junction depth. The study of these parameters shows a low penetration depth of photons for the considered materials CuInS 2 /CuInSe 2 , losses of charge carriers due to recombination phenomena in surface and interface, bulk recombinations, and losses which are also due to the natural phenomenon of diffusion of carriers in the material under a concentration gradient. This study tries to show that the optimization of the growth conditions of layers, a good choice of material arrangement and a good geometric dimensioning are essential to improve collection efficiency of charge carriers and the short-circuit photocurrent of a photovoltaic cell.

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“…On figure 1 we represent the optical absorption coefficients of the different materials and the ZnO reflection coefficient [1,9,11].…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Short-Circuit Photocurrent Density Determination of Chalcopyrite Solar Cells and Study of Basic Parameters Under AM0, AM1, AM1.5 Spectra

Keita¹,

Correa²,

Faye³

et al. 2021

SJEE

View full text Add to dashboard Cite

show abstract

“…solar cell performance. On figures 1 we represent the optical absorption coefficients of the different materials and the ZnO reflection coefficient [1,5,6,13]. The diagram of the structure is shown on figure 2 and the energy band diagram is represented on figure 3 [14].…”

Section: Methodsmentioning

confidence: 99%

“…The expression of the generation rate is given by : [5] IJESRT is licensed under a Creative Commons Attribution 4.0 International License.…”

Section: Calculation Of the Photocurrent In Cuinse2 Layermentioning

confidence: 99%

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Determination and Evolution of Photoelectrical Parameters Based on Cuinse2 and Cuins2 Heterostructure Under Illumination.

2020

IJESRT

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In this paper, we study in the case of monochromatic and polychromatic illuminations, the behavior of the structure ZnO(n+)/CdS(n)/CuInSe2(p)/ CuInS2(p+) where CuInSe2 represent the base and CuInS2 the substrate. ZnO and CdS are used as window layers. We propose the study of the internal quantum efficiency, the generation rate profiles, the photogenerated minority carrier densities and the resulting photocurrent densities, represented versus the junction depth. We consider photon energy ranging between 1.04 eV (λ = 1.192 μm) and 3.1 eV (λ = 0.4 μm). The study of the profiles of these parameters allows to visualize the behavior of the photocreated carriers in the different regions of the structure, to identify the influence of the electrical and geometric parameters on the collection efficiency, shows the transport direction of the carriers and the effects of the interfaces and surfaces on their collection [1].

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Theoretical study of spectral responses of heterojunctions based on CuInSe2 and CuInS2

Cited by 2 publications

References 4 publications

Short-Circuit Photocurrent Density Determination of Chalcopyrite Solar Cells and Study of Basic Parameters Under AM0, AM1, AM1.5 Spectra

Short-Circuit Photocurrent Density Determination of Chalcopyrite Solar Cells and Study of Basic Parameters Under AM0, AM1, AM1.5 Spectra

Determination and Evolution of Photoelectrical Parameters Based on Cuinse2 and Cuins2 Heterostructure Under Illumination.

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