2018
DOI: 10.1016/j.ijleo.2018.08.083
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Theoretical study of structural, electronic and optical properties of InxGa1-xN alloys

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Cited by 9 publications
(5 citation statements)
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“…In particular, at the B3LYP-17 level, the direct band gaps of GaN and InN are close to the experimental values, as shown in [46], b: Ref. [17], c: Ref. [47], d: Ref.…”
Section: Electronic Propertiessupporting
confidence: 79%
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“…In particular, at the B3LYP-17 level, the direct band gaps of GaN and InN are close to the experimental values, as shown in [46], b: Ref. [17], c: Ref. [47], d: Ref.…”
Section: Electronic Propertiessupporting
confidence: 79%
“…The elemental compositions of ternary In x Ga 1−x N compounds have important effects on their physical properties but also on the epitaxial growth process [45]. The variations in the lattice parameters as functions of the In content have been experimentally demonstrated [46,47] and predicted in several DFT computational studies [44,17]. Our results are shown in the left panel of Fig.…”
Section: Structural Propertiessupporting
confidence: 58%
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“…Onn the other hand imaginary part e 2 represents the absorption ability and behavior of these materials show the energy gain for the photovoltaic devices [37]. Basically, it gives us information that how a material response when a disturbance is caused by electromagnetic radiation.…”
Section: Optical Propertiesmentioning
confidence: 99%