2009
DOI: 10.14723/tmrsj.34.291
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Theoretical Study on Leakage Current in MOS with High-K Dielectric Stack: Effects of In-plane-Longitudinal Kinetic Energy Coupling and Anisotropic Masses

Abstract: A model of leakage current in Al/HfO 2 /SiO 2 /Si MOS (metal-oxide-semiconductor) capacitors is given by adopting the tunnel current model in SiGe-based heterojunction bipolar transistors. The velocity of an electron in the metal gate, which originates from the coupling between longitudinal and transverse (in-plane) kinetic energies, and the anisotropic mass of the substrate were included in the leakage current model. It was found that the leakage current obtained by including the gate electron velocity is low… Show more

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Cited by 5 publications
(15 citation statements)
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“…This is because the gate electron velocity causes an effective potential barrier V eff (z) higher than the barrier V(z) as already explained in Refs. [3,[28][29].…”
Section: Resultsmentioning
confidence: 99%
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“…This is because the gate electron velocity causes an effective potential barrier V eff (z) higher than the barrier V(z) as already explained in Refs. [3,[28][29].…”
Section: Resultsmentioning
confidence: 99%
“…It means that the usage of HfSiO x N as the gate oxide can reduce the tunneling current as explained in Refs. [3] and [18]. Figure 6 depicts the electron transmittance as a function of the incident angle of electron (in degree) with respect to the barrier over the range from -80° to 80° in 2. longitudinal-transverse kinetic energy.…”
Section: Resultsmentioning
confidence: 99%
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