Theoretical study on2Dphotoelectric emission ofGaNnanorod array and nanocone array photocathode

Abstract

Summary In order to improve the photoemission performance of gallium nitride (GaN) ultraviolet vacuum photoelectric devices and to obtain GaN photocathode with high quantum efficiency in this paper. The photoelectric emission theoretical models of GaN nanorod array and GaN nanocone array are constructed, and the models are simulated by COMSOL Multiphysics and MATLAB software. By changing the structure of the photocathode emission layer, the low photoemission performance of the conventional reflection‐mode thin‐film photocathode can be improved. After calculating and analyzing the influence of the geometric parameters of the nanorod array on its quantum efficiency (QE), it is found that the nanorod array has the best diameter and spacing to maximize its QE, and the nanocone array can also achieve high QE under some conditions. In addition, the high QE GaN nanorod array and nanocone array structures obtained in this article can provide some references for the production and manufacture of high‐performance GaN photocathode.

Review of photocathodes for electron beam sources in particle accelerators

“…The introduction of a thin graphene sheet could also reduce the high lattice mismatch between GaN and other substrates, such as the widely used Al 2 O 3 or Si. The cut-off spectral response for p-GaN photocathodes is usually at 360 nm 156 and thus a little relief of the UV-laser system can be guaranteed. However, the spectral response is adjustable by the manipulation of the E gap with suitable dopant atoms.…”

Enhanced Photoemission Performance of InGaN Inclined Nanowire Array

“…In order to absorb solar energy as high as possible, nanostructures of different shapes have been continuously developed. − More and more research results have shown that InGaN nanostructures can achieve higher incident light absorption through antireflection. These are mainly attributed to the trapping effect of nanostructures. , Zhangyang et al used first-principles to calculate the electrical and optical properties of InGaN NWA structures under different In components.…”