2015
DOI: 10.1016/j.jlumin.2014.10.064
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Theoretical study on the electronic structures and phosphorescent properties of a series of iridium(III) complexes with the different positional N-substitution in the pyridyl moiety

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Cited by 10 publications
(16 citation statements)
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“…To account for the formation of the doped regions, the ionization potential (IP) and electron affinity (EA) of the emitting compounds can be used as an approach of their charge injection abilities . IP and EA give information about the energy barrier for the hole and electron injection of Ir(III) complexes . In this way, a favored hole injection from the anode into the emitting compound is related to a small IP; while, a larger EA is related to the easy electron injection from the cathode into the emitter .…”
Section: Resultsmentioning
confidence: 99%
“…To account for the formation of the doped regions, the ionization potential (IP) and electron affinity (EA) of the emitting compounds can be used as an approach of their charge injection abilities . IP and EA give information about the energy barrier for the hole and electron injection of Ir(III) complexes . In this way, a favored hole injection from the anode into the emitting compound is related to a small IP; while, a larger EA is related to the easy electron injection from the cathode into the emitter .…”
Section: Resultsmentioning
confidence: 99%
“…In the n-doped region the electrons are added from cathode, and holes are injected in the p-doped zone from anode. According to some studies, the performance of Ir III complexes in emitting devices can be related to several electronic properties evaluating the charge transport and electron (hole) injection 30,32 . According to some studies, the performance of Ir III complexes in emitting devices can be related to several electronic properties evaluating the charge transport and electron (hole) injection 30,32 .…”
Section: Electron Affinity and Ionization Potentialmentioning
confidence: 99%
“…According to some studies, the performance of Ir III complexes in emitting devices can be related to several electronic properties evaluating the charge transport and electron (hole) injection 30,32 . Theoretical studies have related the easier hole injection from the anode into the emissive compound to a small IP, while a larger EA is related to the easy electron injection from the cathode 30,32,58 . In this context, the thermodynamic parameters relating to the ionization potential (IP) and electron affinity (EA), account for the energy barrier for the hole and electron injection, respectively.…”
Section: Electron Affinity and Ionization Potentialmentioning
confidence: 99%
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“…The ground state geometry for each molecule was optimised by the DFT method with Becke's three parameter hybrid method combined with the Lee-Yang-Parr correlation functional (denoted as B3LYP) [24][25][26], which has been extensively used to deal with such complexes in many articles by our groups and others [27][28][29]. The geometry optimisations of the lowest triplet states (T 1 ) were performed by unrestricted B3LYP approach.…”
Section: Computational Detailsmentioning
confidence: 99%