Theoretical treatment of the first-order hyper-Raman scattering in semiconductors

Abstract

The hyper-Raman scattering by LO phonons is theoretically investigated, taking into account the Wannier excitons as intermediate virtual states. The different scattering mechanisms are considered. The hyper-Raman efficiency as a function of the energy of incident photons is calculated for ZnSe, ZnO, CdS and GaN.