“…13 Lapham et al provided insight into the weak exponential relationship between the barrier length and the resistance in the device and further demonstrated that the effective barrier length was significantly smaller than that of the physical barrier. 20 Understanding the relationship between the Al/Al 2 O 3 interface geometry and its transport properties on the atomic scale would improve the control and performance of Josephson junction devices. Therefore, a detailed atomic structure analysis of the Al/Al 2 O 3 interface is essential.…”
“…13 Lapham et al provided insight into the weak exponential relationship between the barrier length and the resistance in the device and further demonstrated that the effective barrier length was significantly smaller than that of the physical barrier. 20 Understanding the relationship between the Al/Al 2 O 3 interface geometry and its transport properties on the atomic scale would improve the control and performance of Josephson junction devices. Therefore, a detailed atomic structure analysis of the Al/Al 2 O 3 interface is essential.…”
Here, we reveal that the electronic structures and transport properties of Al/AlOX/Al JJs are highly dependent on the positions of OVs in the barrier by developing JJ models incorporating different positions, distributions, and numbers of OVs.
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