Theory and simulation of spin transport in antiferromagnetic semiconductors: Application to MnTe

Akabli, K.; Magnin, Yann; Oko, Masataka; Harada, Issei; Diep, H. T.

doi:10.1103/physrevb.84.024428

Cited by 21 publications

(22 citation statements)

References 44 publications

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“…The values we used to obtain that agreement are A = 1 and the Heisenberg critical exponents ν = 0.707, z = 1.97 [23]. In the temperature regions below T < 140 K and above T N the MC result is also in excellent agreement with experiment, unlike in our previous work [18] using the Boltzmann equation.…”

Section: Frustrated Systemssupporting

confidence: 59%

Spin Resistivity in Magnetic Materials

2012

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We show in this paper recent results on the spin resistivity in magnetically ordered materials obtained by Monte Carlo simulations. We discuss its behavior as a function of temperature in various types of crystal: ferromagnetic, antiferromagnetic, and frustrated spin systems. In the model used for simulations, we take into account the interaction between itinerant spins and that between lattice spins and itinerant spins. We also include a chemical potential term, as well as an electric eld. We study in particular the behavior of the spin resistivity at and near the magnetic phase transition where the eect of the magnetic ordering is strongest. In ferromagnetic crystals, the spin resistivity shows a sharp peak very similar to the magnetic susceptibility. This can be understood if one relates the spin resistivity to the spinspin correlation as suggested in a number of theories. The dependence of the shape of the peak on physical parameters such as carrier concentration, magnetic eld strength, relaxation time etc. is discussed. In antiferromagnets, the peak is not so pronounced and in some cases it is absent. Its direct relationship to the spinspin correlation is not obvious. As for frustrated spin systems with strong rst-order transition, the spin resistivity shows a discontinuity at the phase transition. To show the eciency of the simulation method, we compare our results with recent experimental data performed on semiconducting MnTe of NiAs structure. We observe a very good agreement with experiments on the spin resistivity in the whole range of temperature.

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Section: Frustrated Systemssupporting

confidence: 59%

Spin Resistivity in Magnetic Materials

2012

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“…6 We have shown by MC simulations that this is true, however the form of the rounded peak depends on the crystal structure and other interaction parameters. 10,11 Experimentally, there has been a large number of works dealing with the spin resistivity in different magnetic compounds. 12,13,14,15,16,17,18,19,20,21,22 These experiments show the existence of an anomaly of ρ at the magnetic phase transition.…”

Section: Introductionmentioning

confidence: 99%

SPIN RESISTIVITY IN THE FRUSTRATED J₁ - J₂ MODEL

2011

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We study in this paper the resistivity encountered by Ising itinerant spins traveling in the so-called J 1 − J 2 frustrated simple cubic Ising lattice. For the lattice, we take into account the interactions between nearest-neighbors and next-nearest-neighbors, J 1 and J 2 respectively. Itinerant spins interact with lattice spins via a distance-dependent interaction. We also take into account an interaction between itinerant spins. The lattice is frustrated in a range of J 2 in which we show that it undergoes a very strong first-order transition. Using Monte Carlo simulation, we calculate the resistivity ρ of the itinerant spins and show that the first-order transition of the lattice causes a discontinuity of ρ.

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“…In order to study the effects of MI-MI exchange interactions on the behavior of surface conductivity, we consider magnetic clusters as scattering centers and suppose that Dirac electrons interact with these centers rather than single impurities 23,24 . By defining the parameter ξ as the mean size of magnetic clusters, we model the interaction of a Dirac electron located at r with a cluster centered at R as:…”

Section: Our Modelmentioning

confidence: 99%

“…23,24 to explain the temperature dependence of magneto-resistance of magnetic semiconductors. The clusters' mean size (CMS) and the number of clusters with mean sizes (CN) depend on temperature, they increase by increasing temperature, pass through a maximum at a critical temperature, and decrease toward zero at high temperatures 23,24 . We model the scattering of massless Dirac electrons off magnetic clusters with a potential, exponentially decaying with the electron-cluster separation distance rescaled by the CMS.…”

Section: Introductionmentioning

confidence: 99%

Transport in magnetically doped topological insulators: Effects of magnetic clusters

Zarezad

Abouie

2018

Phys. Rev. B

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We study the electron transport in a magnetically doped three dimensional topological insulator (TI) by taking the effects of impurity-impurity exchange interactions into account. The interactions between magnetic impurities give rise to the formation of magnetic clusters with temperature dependent mean sizes, randomly distributed on the surface of the TI. Instead of dealing with single magnetic impurities, we consider surface Dirac electrons to be scattered off magnetic clusters, and define the scattering potential in terms of clusters mean sizes. Within the semiclassical Boltzmann approach, employing a generalized relaxation time approximation, we obtain the surface conductivity of the TI by solving four sets of recursive relations and demonstrate that, the system is highly anisotropic and the surface conductivities possess non-monotonic behaviors, they strongly depends on the direction, the mean size and the number of magnetic clusters. We demonstrate that the dependence of the anisotropic magnetoresistance (AMR) to the spin direction of the magnetic clusters is inconsistent with the angular dependence of the TI doped with non-interacting magnetic impurities. Our results are consistent with the recent experiment on the AMR of the Cr-doped (Bi, Sb) 2 Te3 TI.

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Theory and simulation of spin transport in antiferromagnetic semiconductors: Application to MnTe

Cited by 21 publications

References 44 publications

Spin Resistivity in Magnetic Materials

Spin Resistivity in Magnetic Materials

SPIN RESISTIVITY IN THE FRUSTRATED J₁ - J₂ MODEL

Transport in magnetically doped topological insulators: Effects of magnetic clusters

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Theory and simulation of spin transport in antiferromagnetic semiconductors: Application to MnTe

Cited by 21 publications

References 44 publications

Spin Resistivity in Magnetic Materials

Spin Resistivity in Magnetic Materials

SPIN RESISTIVITY IN THE FRUSTRATED J1 - J2 MODEL

Transport in magnetically doped topological insulators: Effects of magnetic clusters

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SPIN RESISTIVITY IN THE FRUSTRATED J₁ - J₂ MODEL