Theory, Experiment and Computation of Half Metals for Spintronics: Recent
                        Progress in Si-based Materials

Fong, C. Y.; Shaughnessy, Michael; Damewood, L.; Yang, Lihui

doi:10.2478/nsmmt-2012-0001

Cited by 5 publications

(4 citation statements)

References 68 publications

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“…Half-metal electrodes could provide fully spin-polarized currents and large magnetoresistance in GMR and TMR devices. A representative magnetic tunnel junction is illustrated schematically in Figure , in which a magnetic field is used to switch the magnetization of one layer of the junction between parallel (low-resistance) and antiparallel (high-resistance) states with the other layer. , For such a tunnel junction with half-metal electrodes, the absence of one spin component in both electrodes would lead to high tunneling resistance in the antiparallel configuration. In addition, these fully spin-polarized electrodes could provide efficient spin injection into semiconductors and graphene, opening the way for more exotic applications, including spin-based transistors, diodes, and spin Seebeck devices.…”

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confidence: 99%

Two-Dimensional Intrinsic Half-Metals With Large Spin Gaps

et al. 2017

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Through a systematic search of all layered bulk compounds combined with density functional calculations employing hybrid exchange-correlation functionals, we predict a family of three magnetic two-dimensional (2D) materials with half-metallic band structures. The 2D materials, FeCl, FeBr, and FeI, are all sufficiently stable to be exfoliated from bulk layered compounds. The Fe ions in these materials are in a high-spin octahedral d configuration leading to a large magnetic moment of 4 μ. Calculations of the magnetic anisotropy show an easy-plane for the magnetic moment. A classical XY model with nearest neighbor coupling estimates critical temperatures, T, for the Berezinskii-Kosterlitz-Thouless transition ranging from 122 K for FeI to 210 K for FeBr. The quantum confinement of these 2D materials results in unusually large spin gaps, ranging from 4.0 eV for FeI to 6.4 eV for FeCl, which should defend against spin current leakage even at small device length scales. Their purely spin-polarized currents and dispersive interlayer interactions should make these materials useful for 2D spin valves and other spintronic applications.

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confidence: 99%

Two-Dimensional Intrinsic Half-Metals With Large Spin Gaps

et al. 2017

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“…2(a), which denote respectively spin-up and spin-down bands. As a first main feature, we note that only the spin-down bands cross the Fermi level, revealing that the system is halfmetallic and thus attractive for spintronics [41][42][43][44][45] . This property can be further appreciated in Fig.…”

Section: Ground-state Propretiesmentioning

confidence: 99%

Nondegenerate valleys in the half-metallic ferromagnet Fe/WS2

Messaoudi¹,

Ibañez-Azpiroz²,

Bouzar³

et al. 2018

Phys. Rev. B

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We present a first principles investigation of the electronic properties of monolayer WS2 coated with an overlayer of Fe. Our ab initio calculations reveal that the system is a half-metallic ferromagnet with a gap of ∼ 1 eV for the majority spin channel. Furthermore, the combined effect of time-reversal symmetry breaking due to the magnetic Fe overlayer and the large spin-orbit coupling induced by W gives rise to non-degenerate K and K valleys. This has a tremendous impact on the excited state properties induced by externally applied circularly polarized light. Our analysis demonstrates that the latter induces a singular hot spot structure of the transition probability around the K and K valleys for right and left circular polarization, respectively. We trace back the emergence of this remarkable effect to the strong momentum dependent spin-noncollinearity of the valence band involved. As a main consequence, a strong valley-selective magnetic circular dichroism is obtained, making this system a prime candidate for spintronics and photonics applications.

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“…The discovery of the giant magnetoresistance effect in the late 1980s ushered in a new era of potentially manipulating electronic spin [1][2][3][4][5][6], another intrinsic property of electrons. Subsequently, researchers have organically combined the spin and charge characteristics of electrons to create a new field, spintronics [7,8], which can be used in high-density computer hard disks and high-performance non-volatile magnetic random-access memories [9][10][11][12][13]. The spin-orbit coupling (SOC) in semiconductors has attracted extensive * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Coexisting unconventional Rashba- and Zeeman-type spin splitting in Pb-adsorbed monolayer WSe₂

Mao¹,

Li²,

Liu³

et al. 2021

J. Phys.: Condens. Matter

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Based on first-principles calculations, the unconventional Rashba- and Zeeman-type spin splitting can simultaneously coexist in the Pb-adsorbed monolayer WSe2 system. The first two adsorption configurations t 1 and t 2 show remarkable features under the spin–orbit coupling, in which two split energy branches show same spin states at the left or right side of Γ, and the spin polarization is reversed for both Rashba band branches. For the second adsorption configuration, an energy gap was observed near the unconventional spin polarization caused by the repelled Rashba bands for avoid crossing, and this gap can produce non-dissipative spin current by applying the voltage. The results for t 2 configuration with spin reversal show that the repel band gap and Rashba parameter can be effectively regulated within the biaxial strain range of −8% to 6%. By changing the adsorption distance d between Pb and the neighboring Se atom layer, the reduced d caused the transfer from Rashba-type to Zeeman-type spin splitting. This predicted adsorption system would be promising for spintronic applications.

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Theory, Experiment and Computation of Half Metals for Spintronics: Recent Progress in Si-based Materials

Cited by 5 publications

References 68 publications

Two-Dimensional Intrinsic Half-Metals With Large Spin Gaps

Two-Dimensional Intrinsic Half-Metals With Large Spin Gaps

Nondegenerate valleys in the half-metallic ferromagnet Fe/WS2

Coexisting unconventional Rashba- and Zeeman-type spin splitting in Pb-adsorbed monolayer WSe₂

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Theory, Experiment and Computation of Half Metals for Spintronics: Recent Progress in Si-based Materials

Cited by 5 publications

References 68 publications

Two-Dimensional Intrinsic Half-Metals With Large Spin Gaps

Two-Dimensional Intrinsic Half-Metals With Large Spin Gaps

Nondegenerate valleys in the half-metallic ferromagnet Fe/WS2

Coexisting unconventional Rashba- and Zeeman-type spin splitting in Pb-adsorbed monolayer WSe2

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Product

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Coexisting unconventional Rashba- and Zeeman-type spin splitting in Pb-adsorbed monolayer WSe₂