A semi-microscopic theory is developed for heterogeneous
electron
transfer (HET) kinetics based on the energy level alignment approach
at self-assembled monolayer (SAM) covered metal electrodes. Theory
provides the electronic and molecular property-dependent equations
for the HET rate constant (k
0) and the
transfer coefficient (α) for potential. k
0 is formulated using the activation free energy as a product
of the SAM covered metal work function (WF) and fractional electronic
charge exchanged at the transition state (attained through the alignment
of the frontier molecular orbital (FMO) energy level of the electroactive
group with the WF of metal). k
0 is a function
of the metal jellium electronic screening length and dielectric and
of the molecular self-assembly (through its dipole moment, size, and
packing density) and the FMO energies of electroactive groups. The
operative potential at the transition state is governed by α,
which is a function of molecular spacer length and characteristic
electronic-dipolar coupling length. The current rectification phenomenon
in nanogap molecular devices is theoretically analyzed using equations
for k
0 and α for SAM covered source
and drain electrodes. Theory unravels the LUMO or HOMO dichotomy for
a given metal: (i) for the HOMO assisted ET, the metal with a high
WF has a high current rectification ratio (RR), while (ii) for the
LUMO assisted ET, the metal with a low WF has a high current RR in
asymmetrical devices. Theory predicts the reversal in current rectification
by altering the dipole moment of the anchoring molecule, the HOMO/LUMO
energy of the electroactive groups, and the nature of the metal. Finally,
theory shows qualitative and quantitative coherence with the reported
experimental current–potential response of molecular device.