Theory for voltage modulation of transistor lasers using Franz-Keldysh absorption in the presence of optoelectronic feedback

Chang, Chi-Hsiang; Chang, Shu‐Wei; Wu, Chao-Hsin

doi:10.1364/oe.24.025515

Cited by 17 publications

(9 citation statements)

References 25 publications

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“…The absorption coefficient α based on F-K effect under uniform electric field [8,9,20] is expressed as,…”

Section: Rate Equation Model For Transistor Lasermentioning

confidence: 99%

“…Moreover, the transistor laser is operated under voltage modulation in addition to current modulation [4][5][6][7].The Franz-Keldysh (F-K) effect is the phenomenon in which the significant electric field causes additional photon absorption in the intrinsic collector-base region. This phenomenon occurs under the condition that, the emitted photon energy almost equals to the band gap energy of the reverse biased junction region [8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…Distortion reduction schemes for 1.3 μm TL are outlined in reference [18]. A 0.98 μm Transistor Laser (TL) device model with F-K effect is considered for this work [8,9]. The TL under CE configuration and operated in normal (i.e., forward active) mode is considered.…”

Section: Introductionmentioning

confidence: 99%

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Influence of Franz Keldysh Effect on the Modulation depth and Distortion Characteristics of Transistor Laser

Ramya,

Piramasubramanian,

Madhan

2023

Preprint

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Numerical analysis of a Transistor Laser is carried out to investigate the influence of Franz-Keldysh Effect on the non-linear distortion characteristics such as intermodulation (IM). The device considered for the study incorporates a GaAs absorber layer in the collector–base junction of a TL emitting around 980 nm. The base current threshold is obtained as 39 mA for the collector to base voltage of 1 V and it is discerned that the threshold current of TL is dependent on electric field in addition to the bias current. The analytical solution of rate equations at steady state is derived and compared with the numerical simulation and the same is plotted for VCB = 1 V. Moreover, maximum optical light output loss of 12 mW and 1.37 mA additional current is contributed to the collector current for collector base voltage of 3 V under various base currents due to F-K effect. The modulation bandwidth (f− 3dB) of TL under voltage modulation is obtained as 9.63 GHz while, under current modulation, it is found as 8.38 GHz respectively. A maximum modulation depth of 86% is obtained for IB=1.06Ith, at 2.4 GHz. The frequency components related to intermodulation product, IMD3 (2.15 GHz) magnitudes are obtained as − 10.26dBc, − 12.37 dBc, − 13.54 dBc and − 15.92 dBc for VCB voltage value of 0V, 1V, 2V and 3V respectively. The intermodulation product, IMD5 (2.05 GHz)magnitudes are obtained as − 18.89 dBc,−25.76 dBc, − 28.22 dBc and − 36.05 dBc for the collector bias voltage (VCB) value of 0V, 1V, 2V and 3V respectively.

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“…The absorption coefficient α based on F-K effect under uniform electric field [8,9,20] is expressed as,…”

Section: Rate Equation Model For Transistor Lasermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of Franz Keldysh Effect on the Modulation depth and Distortion Characteristics of Transistor Laser

Ramya,

Piramasubramanian,

Madhan

2023

Preprint

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“…10) Based on theoretical calculations, it is expected that a highspeed modulation exceeding the limit of conventional DMLs is possible for both cases. 7,11,12) Indeed, both voltage and current modulation at 20 Gbps and room temperature were demonstrated using TLs operating at a wavelength of 1 μm or shorter. 13) For long-wavelength TLs, we have demonstrated continuous-wave (CW) operation of 1.3 μm npn AlGaInAs/ InP TLs, fabricated on InP substrates [14][15][16][17][18][19] and CW operation of 1.5 μm wavelength GaInAsP/InP TLs has already been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Continuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °C

Yoshitomi

Yamanaka

Goto

et al. 2020

Jpn. J. Appl. Phys.

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A transistor laser (TL) is a device that operates at a high-speed with multiple functions such as output control with low wavelength shift and signal mixing. By adopting a high heat dissipation structure with a high-speed compatible wide electrode pad and thick Au plating in TLs, improvement of temperature performance in 1.3 μm wavelength npn AlGaInAs/InP TL was demonstrated. As a result, continuous-wave operation of a 1.3 μm TL up to 90 °C was achieved. The thermal resistance was estimated to be 25 K W−1, based on the spectrum behavior, which is at least four times lower than the previously observed value.

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“…11,12) Theoretical calculations indicate that both schemes can enhance the modulation bandwidth. [13][14][15] Research on TL has been carried out as follows: TL with distributed feedback surface grating, 16) vertical cavity structure, 17) group IV semiconductor, 18) high current gain, 19) and so on. A continuous-wave (CW) operation of 1.55-µm TLs at −190 °C was reported.…”

Section: Introductionmentioning

confidence: 99%

Lasing characteristics of 1.3-µm npn-AlGaInAs transistor-laser with narrower-bandgap p-GaInAsP base layer on semi-insulating InP substrate

Yoshitomi

Tadano

Yamanaka

et al. 2017

Jpn. J. Appl. Phys.

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A 1.3-µm npn-AlGaInAs transistor laser (TL) on Fe-doped semi-insulating (SI) InP substrate is realized for the first time with improved lasing characteristics by adopting a p-GaInAsP base layer with narrower bandgap and a 4-µm-thick Au electrode. The narrower bandgap is introduced to improve a current gain. The 4-µm-thick Au electrode is introduced to improve thermal characteristics by electrolytic plating. A current gain of 0.27, which is 1.5 times higher than that in our previous report, can be achieved due to the narrower bandgap. Moreover, lasing operation up to 40 °C that is attributed to the lower thermal resistance of the device is achieved by Au plating. The thermal resistance of a TL with Au plating is 20% lower than that of a TL without Au plating, and the temperature is the highest temperature operation for 1.3-µm TL.

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Theory for voltage modulation of transistor lasers using Franz-Keldysh absorption in the presence of optoelectronic feedback

Cited by 17 publications

References 25 publications

Influence of Franz Keldysh Effect on the Modulation depth and Distortion Characteristics of Transistor Laser

Influence of Franz Keldysh Effect on the Modulation depth and Distortion Characteristics of Transistor Laser

Continuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °C

Lasing characteristics of 1.3-µm npn-AlGaInAs transistor-laser with narrower-bandgap p-GaInAsP base layer on semi-insulating InP substrate

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