Theory of Auger Ejection of Electrons from Metals by Ions

Hagstrum, H. D.

doi:10.1103/physrev.96.336

Cited by 1,337 publications

(388 citation statements)

References 30 publications

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“…We can further improve equation (16) by realizing that an electron which doesn't interact with the gas will return to the target with its initial energy (typical a few eV [30]). Hence, an electron which has not collided with a gas atom, can be reflected at the target surface and continue its path, or it can be absorbed (or recaptured) by the target.…”

Section: Post Magnetronsmentioning

confidence: 99%

Sputter Deposition Processes

Depla

Mahieu

Greene

2010

Handbook of Deposition Technologies for Films and Coatings

127

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Sputter deposition is a widely used technique to deposit thin films on substrates. The technique is based upon ion bombardment of a source material, the target. Ion bombardment results in a vapor due to a purely physical process, i.e. the sputtering of the target material. Hence, this technique is part of the class of physical vapor deposition techniques, which includes, for example, thermal evaporation and pulsed laser deposition. The most common approach for growing thin films by sputter deposition is the use of a magnetron source in which positive ions present in the plasma of a magnetically enhanced glow discharge bombard the target. This popular technique forms the focus of this chapter. The target can be powered in different ways, ranging from dc for conductive targets, to rf for nonconductive targets, to a variety of different ways of applying current and/or voltage pulses to the target. Since sputtering is a purely physical process, adding chemistry to, for example, deposit a compound layer must be done ad hoc through the addition of a reactive gas to the plasma, i.e. reactive sputtering. The undesirable reaction of the reactive gas with the target material results in a non-linear behavior of the deposition parameters as a function of the reactive gas flow. To model this behavior, the fluxes of the various species towards the target must be determined. However, equally important are the fluxes of species incident at the substrate because they not only influence the reactive sputter deposition process, but also control the growth of the desired film. Indeed, the microstructure of magnetron sputter deposited films is defined by the identity of the particles arriving at the substrate, their fluxes and the energy per particle.

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Section: Post Magnetronsmentioning

confidence: 99%

Sputter Deposition Processes

Depla

Mahieu

Greene

2010

Handbook of Deposition Technologies for Films and Coatings

127

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“…The theoretical basis for P is less safe. Since the pioneering work by Hagstrum [6], it is generally accepted that Auger neutralization (AN) plays an important role, at least at low energies. Hagstrum derived a relation for the probability P A to survive AN in the charged state when approaching or leaving the surface.…”

Section: Velocity Scaling Of Ion Neutralization In Low Energy Ion Scamentioning

confidence: 99%

Velocity Scaling of Ion Neutralization in Low Energy Ion Scattering

et al. 2002

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“…5 Improving the performance of AC-PDPs and reducing the firing voltage of plasma (Vf) is essential, and can be achieved by using a protective layer with a higher ion-induced secondary electron (IISE) yield, γ. Therefore, γ is one of the most important parameters of the MgO protective layer for improving the discharge characteristics, 1,6 and the IISE phenomenon in MgO films has been intensively studied. [7][8][9][10][11][12][13][14][15] The magnitude of γ is strongly influenced by the MgO film electronic structure.…”

Section: Introductionmentioning

confidence: 99%

Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

et al. 2015

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The band gap and defect states of MgO thin films were investigated by using reflection electron energy loss spectroscopy (REELS) and high-energy resolution REELS (HR-REELS). HR-REELS with a primary electron energy of 0.3 keV revealed that the surface F center (FS) energy was located at approximately 4.2 eV above the valence band maximum (VBM) and the surface band gap width (E g S ) was approximately 6.3 eV. The bulk F center (F B ) energy was located approximately 4.9 eV above the VBM and the bulk band gap width was about 7.8 eV, when measured by REELS with 3 keV primary electrons. From a first-principles calculation, we confirmed that the 4.2 eV and 4.9 eV peaks were F S and F B , induced by oxygen vacancies. We also experimentally demonstrated that the HR-REELS peak height increases with increasing number of oxygen vacancies. Finally, we calculated the secondary electron emission yields (γ) for various noble gases. He and Ne were not influenced by the defect states owing to their higher ionization energies, but Ar, Kr, and Xe exhibited a stronger dependence on the defect states owing to their small ionization energies. C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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Theory of Auger Ejection of Electrons from Metals by Ions

Cited by 1,337 publications

References 30 publications

Sputter Deposition Processes

Sputter Deposition Processes

Velocity Scaling of Ion Neutralization in Low Energy Ion Scattering

Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

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