2019
DOI: 10.1016/j.orgel.2018.10.044
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Theory of carrier accumulation in organic heterojunctions

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Cited by 13 publications
(15 citation statements)
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“…In this letter, we prepared two-layered OLED model samples with p-type and n-type organic layers for PS-EH to interpret the built-in potential profile compared with previous reports. [21][22][23][24][25] We show the potential of EH for clarifying the light emitting mechanism in OLED devices.…”
mentioning
confidence: 86%
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“…In this letter, we prepared two-layered OLED model samples with p-type and n-type organic layers for PS-EH to interpret the built-in potential profile compared with previous reports. [21][22][23][24][25] We show the potential of EH for clarifying the light emitting mechanism in OLED devices.…”
mentioning
confidence: 86%
“…Takahashi suggested that the activation of localized carrier source (ALCS) supplied holes from this level by thermal excitation and that this behavior occurs even at room temperature. [21][22][23] Therefore, the sample heating due to electron beam irradiation cannot be neglected even though the sample temperature increases at most 10 °C under the PS-EH condition. Carriers trapped in the impurity levels could also affect the formation of electric fields.…”
mentioning
confidence: 99%
“…Such devices may show a better injection of positive charge carriers and efficient exciton generation in the emissive zone [44,45]. However, increasing the voltage increases the current density and luminance decreases due to charge imbalance and the influence of exciton quenching [46].…”
Section: Electroluminescent Propertiesmentioning
confidence: 99%
“…Among these processes, the carrier motion plays the leading role and is imperative to investigate. It is particularly worth noting the excess charges stored in bulk, which may originate from the charges’ accumulation near the interface [ 16 ] or the traps in localized states [ 17 ]. Moreover, they are ubiquitous and may even cause great damage to the device’s performance.…”
Section: Introductionmentioning
confidence: 99%