Theory of carrier multiplication and noise in avalanche devices—Part II: Two-carrier processes

Vliet, K.M. van; Friedmann, A.; Rucker, L.M.

doi:10.1109/t-ed.1979.19490

Cited by 80 publications

(29 citation statements)

References 10 publications

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“…This has been analyzed by Van Vliet [40] and by Lukaszek [41] and leads to a lowering of the excess noise factor, compared to McIntyre predictions, for sufficiently low gains. When both hole-and electron-ionization are included in a multi-stage discretized APD, the excess noise can be approximated after [40], [42] as…”

Section: ) Analytical Discrete Low-gain Multi-layer Apd Modelsmentioning

confidence: 99%

Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise

Williams

Compton

Ramírez

et al. 2013

IEEE J. Electron Devices Soc.

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We report the design, fabrication, and test of an InGaAs avalanche photodiode (APD) for 950-1650 nm wavelength sensing applications. The APD is grown by molecular beam epitaxy on InP substrates from lattice-matched InGaAs and InAlAs alloys. Avalanche multiplication inside the APD occurs in a series of asymmetric gain stages whose layer ordering acts to enhance the rate of electron-initiated impact ionization and to suppress the rate of hole-initiated ionization when operated at low gain. The multiplication stages are cascaded in series, interposed with carrier relaxation layers in which the electric field is low, preventing avalanche feedback between stages. These measures result in much lower excess multiplication noise and stable linear-mode operation at much higher avalanche gain than is characteristic of APDs fabricated from the same semiconductor alloys in bulk. The noise suppression mechanism is analyzed by simulations of impact ionization spatial distribution and gain statistics, and measurements on APDs implementing the design are presented. The devices employing this design are demonstrated to operate at linear-mode gain in excess of 6 000 without avalanche breakdown. Excess noise characterized by an effective impact ionization rate ratio below 0.04 were measured at gains over 1 000.

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Section: ) Analytical Discrete Low-gain Multi-layer Apd Modelsmentioning

confidence: 99%

Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise

Williams

Compton

Ramírez

et al. 2013

IEEE J. Electron Devices Soc.

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show abstract

“…The signal per pixel is so low that the sensors must be able to detect one photon. To be single photon sensitive, the sCMOS detector [4] uses a very low noise CMOS sensor to reduce the readout noise, the emCCD [5] [6] multiplies the charges by impact ionization in the silicon before the readout system and the ebCMOS uses an electron acceleration bombarded CMOS as multiplication process before readout as well. Fig.…”

Section: Single Photon Detection Benchmarkingmentioning

confidence: 99%

Single photon detection and localization accuracy with an ebCMOS camera

Cajgfinger¹,

Dominjon²,

Barbier³

2015

Nuclear Instruments and Methods in Physics Research Section A:

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“…The cascade multiplication model predicts thereby different expression of the multiplication factor relative to that of traditional [16][17][18][19][20] models, based on steady-state statistical consideration. The statistical models can be attributed to the asymptotic ones, where multiplication region is assumed to be very long, ''what is equivalent that number of ionizing collisions per primary carrier transit is infinite'' [24].…”

Section: Analysis Of Multiplication Factormentioning

confidence: 99%