Theory of diffusion-induced selective area growth of III-V nanostructures

Dubrovskiı̆, V. G.

doi:10.1103/physrevmaterials.7.026001

Cited by 13 publications

(39 citation statements)

References 39 publications

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“…If group III adatoms are able to diffuse on the substrate surface, as in Refs. [ 35 , 49 , 50 , 51 ], one should consider the surface diffusion of adatoms rather than their re-emission, which will change the growth kinetics in the initial stage. Furthermore, the morphological evolution can be affected by negative diffusion flux from NW to the mask surface [ 49 , 50 ].…”

Section: Empirical Approachmentioning

confidence: 99%

“…However, the resulting diffusion flux remains the same if ring-shaped island nucleates at the facet edge and propagates to the center. Both steps evaporate adatoms at the rates determined by the effective equilibrium concentrations at the step edges [ 50 ]

…”

Section: Rigorous Approach Based On Diffusion Equationsmentioning

confidence: 99%

“…Here,

and

are the temperature-dependent equilibrium activities per III-V pair on the top and side facet, respectively. Under group V-rich conditions, the spatially uniform surface concentrations of group V adatoms

and

are determined by the balance of the incoming atomic flux of group V adatoms and their desorption [ 50 ].…”

Section: Rigorous Approach Based On Diffusion Equationsmentioning

confidence: 99%

“…Conversely, the second boundary condition at the transparent upper edge of the NW can have different forms. The most general form requires the continuity of the diffusion flux across the edge and expresses it through the adatom transition rates from the NW sidewalls to its top and in the opposite direction [ 44 , 49 , 50 ]. Unfortunately, these transition rates are generally unknown.…”

Section: Rigorous Approach Based On Diffusion Equationsmentioning

confidence: 99%

“…Here, we again use the same boundary conditions at the step edge and the bottom edge of the NW in contact with the mask surface. If surface diffusion on the mask were enabled, the second boundary condition would link this adatom population to a population of adatoms on the mask [ 44 , 49 , 50 ]. However, we assume that all group III adatoms arriving onto the mask are re-emitted, in which case the choice of “adsorbing” boundary condition seems plausible.…”

Section: Rigorous Approach Based On Diffusion Equationsmentioning

confidence: 99%

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Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches

Dubrovskiı̆

2023

Nanomaterials

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Catalyst-free growth of III-V and III-nitride nanowires (NWs) by the self-induced nucleation mechanism or selective area growth (SAG) on different substrates, including Si, show great promise for monolithic integration of III-V optoelectronics with Si electronic platform. The morphological design of NW ensembles requires advanced growth modeling, which is much less developed for catalyst-free NWs compared to vapor–liquid–solid (VLS) NWs of the same materials. Herein, we present an empirical approach for modeling simultaneous axial and radial growths of untapered catalyst-free III-V NWs and compare it to the rigorous approach based on the stationary diffusion equations for different populations of group III adatoms. We study in detail the step flow occurring simultaneously on the NW sidewalls and top and derive the general laws governing the evolution of NW length and radius versus the growth parameters. The rigorous approach is reduced to the empirical equations in particular cases. A good correlation of the model with the data on the growth kinetics of SAG GaAs NWs and self-induced GaN NWs obtained by different epitaxy techniques is demonstrated. Overall, the developed theory provides a basis for the growth modeling of catalyst-free NWs and can be further extended to more complex NW morphologies.

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Section: Empirical Approachmentioning

confidence: 99%

…”

Section: Rigorous Approach Based On Diffusion Equationsmentioning

confidence: 99%

“…Here,

and

are determined by the balance of the incoming atomic flux of group V adatoms and their desorption [ 50 ].…”

Section: Rigorous Approach Based On Diffusion Equationsmentioning

confidence: 99%

Section: Rigorous Approach Based On Diffusion Equationsmentioning

confidence: 99%

Section: Rigorous Approach Based On Diffusion Equationsmentioning

confidence: 99%

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Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches

Dubrovskiı̆

2023

Nanomaterials

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Surface diffusion effects on the system and the film properties of a Ziff–Gulari–Barshad type growth model

Cheimarios

2024

Materials Today Communications

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Ultrathin Te-Doped GaP Nanoantenna with Crystal Phase Transitions

Diak

Thomas

Dubrovskiı̆

et al. 2023

Crystal Growth & Design

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We report Te-doped GaP nanowires (NWs) with positive tapering and radii measuring as low as 5 nm grown by the self-assisted vapor–liquid–solid mechanism using selective-area molecular beam epitaxy. The occurrence of the ultrathin nanoantenna showed a dependence on pattern pitch (separation between NWs) with a predominance at 600 nm pitch, and exhibited radius oscillations that correlate with polytypic zincblende/wurtzite segments. A growth model explains the positive tapering of the NW leading to an ultrathin tip from the suppression of surface diffusion of Ga adatoms on the NW sidewalls by Te dopant flux. The model also provides a relationship between the radius modulations and the oscillations of the droplet contact angle, predicting the quasi-periodic radius oscillations and corresponding crystal phase transitions. These results establish a link between dopants and the ability to control NW morphology and crystal phase with possible applications in thermoelectrics, quantum emitters, and photodetectors.

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Theory of diffusion-induced selective area growth of III-V nanostructures

Cited by 13 publications

References 39 publications

Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches

Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches

Surface diffusion effects on the system and the film properties of a Ziff–Gulari–Barshad type growth model

Ultrathin Te-Doped GaP Nanoantenna with Crystal Phase Transitions

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