Theory of Double Injection into a Semiconductor of Finite Cross-Section

Hirota, Ryogo; Tosima, Soitiro; Lampert, Murray A.

doi:10.1143/jpsj.18.535

Cited by 32 publications

(4 citation statements)

References 6 publications

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“…The problem of the injected plasma in a semiconductor of finite cross section has been solved by Hirota et al (1963) for the slab and the cylinder. They show that (3.6) is still valid if 7 is replaced by an effective lifetime ?,,,'which depends on 7 , the surface recombination velocity and the cross-sectional dimension.…”

Section: L2mentioning

confidence: 99%

Volume-controlled current injection in insulators

1964

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Current injection in insulators provides a valuable technique for obtaining such information about defect states in insulators as their density, their energetic location in the forbidden gap, and their cross sections for capture of free electrons and holes. I t also enables determination of free carrier drift mobilities. The physical principles underlying one-carrier space-charge-limited current injection, both steady-state and transient, and steady-state, two-carrier, largely neutralized current injection are discussed. Experimental verifications of the different types of current injection are also discussed briefly.

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Section: L2mentioning

confidence: 99%

Volume-controlled current injection in insulators

1964

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“…I n regard to magnetodiodes, equation (11) corresponds to the case of small Hall angles. For isotropic material and H , = 0 the use of a quasi-one-dimensional approximation [15] is always possible because the diffusion length L , determining the carrier distribution in y-direction, is much smaller than the increased diffusion length D Ex z for the fields used; this length is determining the carrier distribution in x-direction. I n anisotropic specimens or H , + 0 the distribution in y-direction for sufficiently high Ex is determined by two lengths : shortened by about --and increased by about a D Ex z; that is why the quasi-one-dimensionality is valid only if condition (11) is satisfied.…”

Section: Theorymentioning

confidence: 99%

mentioning

confidence: 99%

“…The calculation of z was carried out [15] for an isotropic plate --d 2 y 5 d with the same surface recombination velocities S on both surfaces and it was obtained For the anisotropic case the field EU2) exists in the plate, the value of it being equal to where a is the parameter of anisotropy IEgI = a IE,l 7 ( 5 ) 2, I n this case the talk is about the effective field resulting in the transverse drift of electrons and holes (see below formula (17)). I t s value may essentially differ from the "true" electric field, that is equal to the sum of the Hall and Dember fields.…”

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confidence: 99%

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Injection of Current Carriers in Anisotropic Semiconductor Plates and the Magnetodiode Effect

Gribnikov

Lomova

Романов

1968

Physica Status Solidi (b)

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It is shown that the current-voltage characteristics in of plate-or filament-shaped long diodes are essentially different for the isotropic and anisotropic cases. For the effective lifetime of excess carriers in anisotropic case is inversely proportional to the external electric field, the direct current through such a diode increases slower than I -U z , that is "ohmically" I -U . As a result of such difference the characteristics of the isotropic plate-shaped diodes strongly depend on pressure and magnetic field (the effect of a small magnetic field may be considered to be equivalent to the effect of pressure). This indicates that significant tensodiode and magnetodiode effects take place. A satisfactory agreement of the experimental data with the theory has been obtained. HoxyseHo xoporuee cornacHe TeopeTmecmx H a~c n e p~-MeHTaJIbHbIX pe3yJIbTaTOB.

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Negative magnetoresistance in asymmetric p+–i–n+ structures

Munteanu

Constantinescu

1974

Phys. Stat. Sol. (a)

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Investigation of the magnetoresistance in asymmetrical p+–i–n+‐structures (with different surface recombination velocities) whose thickness is comparable or smaller than the diffusion length of carriers is presented. It is shown that in the double‐injection regime these devices have a high sensitivity in magnetic field. The experimental results are discussed taking into account that the double injection current in the ohmic relaxation regime is controlled by the recombination processes. Theoretical and experimental analysis show that the high magnetoresistive effect (negative and positive) in asymmetrical p+–i–n+‐structures is a result of the effective lifetime modulation of the injected carriers in the presence of the surface recombination and of the transversal magnetic fields.

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Theory of Double Injection into a Semiconductor of Finite Cross-Section

Cited by 32 publications

References 6 publications

Volume-controlled current injection in insulators

Volume-controlled current injection in insulators

Injection of Current Carriers in Anisotropic Semiconductor Plates and the Magnetodiode Effect

Negative magnetoresistance in asymmetric p+–i–n+ structures

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