Theory of electric force microscopy in the parametric amplification regime

Ouisse, T.; Stärk, Martin; Martins, Frederico Rodrigues; Bercu, B.; Huant, S.; Chevrier, J.

doi:10.1103/physrevb.71.205404

Cited by 18 publications

(16 citation statements)

References 29 publications

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“…This enhanced resolution in AM-KPFM with a near resonance excitation may be due to the parametric effect discussed in [18,19]. As the electrostatic interaction becomes large, the electrostatic force gradient term, which is usually neglected in AM-KPFM, begins to play a dominant role in the resulting amplitude response.…”

Section: Am-kpfm Mode Versus Fm-kpfm Modementioning

confidence: 99%

Determination of the local contact potential difference of PTCDA on NaCl: a comparison of techniques

et al. 2009

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There has been increasing focus on the use of Kelvin probe force microscopy (KPFM) for the determination of local electronic structure in recent years, especially in systems where other methods, such as scanning tunnelling microscopy/spectroscopy, may be intractable. We have examined three methods for determining the local apparent contact potential difference (CPD): frequency modulation KPFM (FM-KPFM), amplitude modulation KPFM (AM-KPFM), and frequency shift-bias spectroscopy, on a test system of 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) on NaCl, an example of an organic semiconductor on a bulk insulating substrate. We will discuss the influence of the bias modulation on the apparent CPD measurement by FM-KPFM compared to the DC-bias spectroscopy method, and provide a comparison of AM-KPFM, AM-slope detection KPFM and FM-KPFM imaging resolution and accuracy. We will also discuss the distance dependence of the CPD as measured by FM-KPFM for both the PTCDA organic deposit and the NaCl substrate.

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Section: Am-kpfm Mode Versus Fm-kpfm Modementioning

confidence: 99%

Determination of the local contact potential difference of PTCDA on NaCl: a comparison of techniques

et al. 2009

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“…͑9a͔͒, ͑2͒ the signal intensity of ⌬f at is often low because of limited bandwidth of the FM demodulator, ͑3͒ the large AC voltage bias necessary for high sensitivity can induce band bending on semiconductor samples, ͑4͒ very short tip-surface distances are required to obtain accurate values of , and ͑5͒ the measurement itself is extremely sensitive to lift height. It has also been demonstrated that KFM can be strongly affected by parametric amplification for tip-surface distances much larger than the onset of tapping, 48 making Eqs. ͑9a͒-͑9c͒ no longer valid.…”

Section: Kelvin Probe Versus Am-efmmentioning

confidence: 98%

Amplitude-mode electrostatic force microscopy in UHV: Quantification of nanocrystal charge storage

Gordon

Baron

2005

Phys. Rev. B

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Charge storage in Si and Ge dots ͑8-60 nm͒ has been studied via electrostatic force microscopy ͑EFM͒ in UHV using a nontraditional amplitude-mode ͑AM͒ inversion method to detect cantilever frequency shift and surface potential. Specifics of the AM technique are discussed relating to resonance curve inversion, nonlinear tip-surface coupling, and force vs force gradient "nulling" to extract surface potentials. Single dots were charged via contact electrification with the atomic force microscopy ͑AFM͒ tip, followed by EFM, to quantitatively determine how the dot charging level depends on injection bias and dot size. Correlating surface potential with dot charge is addressed by calculating the dipole-dipole, dipole-charge, and capacitive forces acting on the AFM tip in a rigorous manner. For this, the tip-substrate capacitive interaction was studied in detail to account for tip geometry and screening effects due to the dot dielectric volume. In every instance, the change in surface potential measured above a charged dot was seen to be carrier-type dependent and vary linearly with injection bias, where the charging efficiency ͑e − / V applied bias͒ was determined by only the dot-substrate contact area. Charging efficiencies for small dots ͑8 nm͒ were ϳ10 e − / V and larger dots ͑50-60 nm͒ showed ϳ200-400 e − / V, agreeing well with the predicted single e − charging behavior of the tip-dot-substrate double tunnel junction ͑orthodox theory͒. These experiments demonstrate that AM-EFM can quantitatively measure charge near the level of single electrons-so long as tip shape and screening effects ͑perturbation of the tip-substrate electric field by the nanostructure being interrogated͒ are understood and incorporated into models for static charge determination.

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“…ternal signal) and non-degenerate (where the pump is locked at a frequency distinct from that of the external signal) manifestations of parametric amplification in a variety of resonant microsystems, including torsional microresonators [4,5], electric force microscopes [6], optically-excited micromechanical oscillators [7], micro ring gyroscopes [8], MEMS diaphragms [9], coupled microresonators [10], and microcantilevers [11][12][13].…”

Section: Detc2007-35426mentioning

confidence: 99%

Mechanical Domain Parametric Amplification

Rhoads

Miller

Shaw

et al. 2008

Journal of Vibration and Acoustics

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Though utilized for more than 50years in a variety of power and communication systems, parametric amplification, the process of amplifying a harmonic signal with a parametric pump, has received very little attention in the mechanical engineering community. In fact, only within the past 15–20years has the technique been implemented in micromechanical systems as a means of amplifying the output of resonant microtransducers. While the vast potential of parametric amplification has been demonstrated, to date, in a number of micro- and nanomechanical systems (as well as a number electrical systems), few, if any, macroscale mechanical amplifiers have been reported. Given that these amplifiers are easily realizable using larger-scale mechanical systems, the present work seeks to address this void by examining a simple representative example: a cantilevered beam with longitudinal and transverse base excitations. The work begins with the systematic formulation of a representative system model, which is used to derive a number of pertinent metrics. A series of experimental results, which validate the work’s analytical findings, are subsequently examined, and the work concludes with a brief look at some plausible applications of parametric amplification in macroscale mechanical systems.

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Theory of electric force microscopy in the parametric amplification regime

Cited by 18 publications

References 29 publications

Determination of the local contact potential difference of PTCDA on NaCl: a comparison of techniques

Determination of the local contact potential difference of PTCDA on NaCl: a comparison of techniques

Amplitude-mode electrostatic force microscopy in UHV: Quantification of nanocrystal charge storage

Mechanical Domain Parametric Amplification

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